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Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL
Lu B(陆波); Chen Y(陈勇); Lu, B; Chen, Y
2018
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE (IF:1.171[JCR-2016],1.277[5-Year])
ISSN0018-9499
EISSN1558-1578
卷号65期号:6页码:1307-1314
文章类型Article
摘要Design, analysis, and experimental results of a four-channel correlated double sampling (CDS) application specific integrated circuit (ASIC), named CDS4C, are presented. It aims to interface a type of multi-readout swept charge device for applications in the fields of X-ray spectroscopy, imaging as well as timing. Compared with the conventional CDS architectures based on clamping technique, the innovation of the CDS4C ASIC is that it not only moves the clamping switch out of the signal path but also omits the sampling switch, eliminating the nonlinearity and thermal noise introduced by these switches. Besides, it is implemented in a fully differential architecture which suppresses the second-order harmonic distortion and common-mode interferences, improving the linearity furthermore. A theoretical noise analysis that takes into account the limited bandwidth of the opamp highly coincides with the simulation results. A prototype of the CDS4C ASIC is fabricated with GlobalFoundries 0.35-mu m CMOS process. The experimental results show, within the effective input dynamic range of 0 similar to 20 mV which is equivalent to an X-ray energy band from 0 to 18.25 keV, its integral nonlinearity is 0.032% and equivalent noise charge (ENC) is 8.6 e(-)under 100 kHz pixel rate, whilst the total power consumption is only 8.5 mW from a single 3.3-V supply voltage. When tested with the target Xray charge-coupled device (CCD)-CCD236 using a 1 mu Ci Fe-55 radioisotope, the ASIC achieves together with the CCD an overall energy resolution characterized by full-width-half-magnitude as 165 +/- 4.5 eV at 5.9 keV and a total ENC as 10.3 e(-) where CCD236 is cooled down to in the vicinity of 190-K.
关键词Application specific integrated circuit (ASIC) correlated double sampling (CDS) integral nonlinearity (INL) timing observation X-ray charge-coupled device (CCD)
DOI10.1109/TNS.2018.2833484
关键词[WOS]SATELLITE ; CIRCUIT ; HXMT
收录类别SCI ; EI
语种英语
WOS研究方向Engineering ; Nuclear Science & Technology
WOS类目Engineering, Electrical & Electronic ; Nuclear Science & Technology
WOS记录号WOS:000435225100010
EI入藏号20181905170375
ADS Bibcode2018ITNS...65.1307L
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被引频次:3 [ADS]
文献类型期刊论文
条目标识符https://ir.ihep.ac.cn/handle/311005/286026
专题粒子天体物理中心
通讯作者Lu B(陆波)
作者单位中国科学院高能物理研究所
第一作者单位中国科学院高能物理研究所
通讯作者单位中国科学院高能物理研究所
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Lu B,Chen Y,Lu, B,et al. Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(6):1307-1314.
APA 陆波,陈勇,Lu, B,&Chen, Y.(2018).Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(6),1307-1314.
MLA 陆波,et al."Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.6(2018):1307-1314.
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