Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy

doi:10.1016/j.matlet.2016.12.137

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	Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy
	Ablat, A; Mamat, M; Ghupur, Y; Aimidula, A; Wu, R; Baqi, MA; Gholam, T; Wang, JO; Qian, HJ; Wu, R; Ibrahim, K; Wang JO(王嘉鸥); Qian HJ(钱海杰); Wu R(吴蕊); Kui RX(奎热西)
	2017
发表期刊	MATERIALS LETTERS (IF:2.572[JCR-2016],2.426[5-Year])
ISSN	0167-577X
EISSN	1873-4979
卷号	191 页码:97-100
文章类型	Article
摘要	A study of the interface between La2O3 films and Si substrates was conducted with the aim to understand interfacial change during the film growth process. A detailed comparison of Si 2s, 2p, and O 1s photoelectron spectra of the La2O3/Si interface formed on clean silicon substrates indicates that a La-silicate phase forms rapidly at the interface during the film deposition process. A detailed analysis of La(2)O3 films of varying thicknesses showed that as film layering increased, the substrates became coated with an La silicate interfacial layer which prevents the formation of SiOx. Moreover, the La2O3 forms when film thickness reaches a certain value, leading to practical application of La2O3 in the manufacture of MOSFET transistors. (C) 2017 Elsevier B.V. All rights reserved.
关键词	La2O3 High-k Structural X-ray techniques Interface
DOI	10.1016/j.matlet.2016.12.137
关键词[WOS]	RAY PHOTOELECTRON-SPECTROSCOPY ; ATOMIC LAYER DEPOSITION
收录类别	SCI ; ADS ; EI ; SCOPUS
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000394403000025
EI入藏号	20170203234582
EI主题词	Electronic structure - Film growth - Lanthanum oxides - Silicates - Silicon - Substrates - X ray photoelectron spectroscopy
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 804 Chemical Products Generally - 951 Materials Science
ADS Bibcode	2017MatL..191...97A
ADS URL	https://ui.adsabs.harvard.edu/abs/2017MatL..191...97A
ADS引文	https://ui.adsabs.harvard.edu/abs/2017MatL..191...97A/citations
引用统计	正在获取... 被引频次：2 [ADS]
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/285126
专题	多学科研究中心
作者单位	中国科学院高能物理研究所
第一作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Ablat, A,Mamat, M,Ghupur, Y,et al. Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy[J]. MATERIALS LETTERS,2017,191:97-100.
APA	Ablat, A.,Mamat, M.,Ghupur, Y.,Aimidula, A.,Wu, R.,...&奎热西.(2017).Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy.MATERIALS LETTERS,191,97-100.
MLA	Ablat, A,et al."Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy".MATERIALS LETTERS 191(2017):97-100.