Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer

doi:10.1117/12.2261426

IHEP OpenIR > 实验物理中心

	Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer
	Gao, Yang ; Li, Jun-Ru ; Jia, Le ; Lei, Qiang ; Lei Q(雷强)
	2017
发表期刊	Proceedings of SPIE - The International Society for Optical Engineering
ISSN	0277-786X
EISSN	1996-756X
ISBN	978-1-5106-0989-1; 978-1-5106-0990-7
卷号	10244 页码:102441W
文章类型	Proceedings Paper
摘要	In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S-21) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S-21 of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer.
会议名称	International Conference on Optoelectronics and Microelectronics Technology and Application (OMTA)
会议地点	Shanghai, PEOPLES R CHINA
会议日期	OCT 10-12, 2016
关键词	RF MEMS capacitive switch dielectric layer roughness latching down-state capacitance degradation
DOI	10.1117/12.2261426
收录类别	EI ; CPCI ; SCOPUS ; ADS
语种	英语
WOS研究方向	Science & Technology - Other Topics ; Optics
WOS类目	Nanoscience & Nanotechnology ; Optics
WOS记录号	WOS:000394540100067
EI入藏号	20171503546578
EI主题词	Capacitance - Degradation - Electric switches - Electromagnetic simulation - Equivalent circuits - Microelectronics - Optoelectronic devices - Outages - Surface roughness
EI分类号	701.1 Electricity: Basic Concepts and Phenomena - 703.1.1 Electric Network Analysis - 706.1 Electric Power Systems - 741.3 Optical Devices and Systems - 802.2 Chemical Reactions - 931.2 Physical Properties of Gases, Liquids and Solids
ADS Bibcode	2016SPIE10244E..1WG
ADS URL	https://ui.adsabs.harvard.edu/abs/2016SPIE10244E..1WG
ADS引文	https://ui.adsabs.harvard.edu/abs/2016SPIE10244E..1WG/citations
引用统计	正在获取... 被引频次：0 [ADS]
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/284196
专题	实验物理中心
作者单位	1.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China 2.Southwest Univ Sci & Technol, Sch Informat Engn, Mianyang 621010, Sichuan, Peoples R China 3.Chongqing Univ, Natl Key Lab Fundamental Sci Micro Nanodevice & S, Chongqing 400044, Peoples R China 4.Chinese Acad Sci, Inst High Energy Phys, State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Gao, Yang,Li, Jun-Ru,Jia, Le,et al. Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer[J]. Proceedings of SPIE - The International Society for Optical Engineering,2017,10244:102441W.
APA	Gao, Yang,Li, Jun-Ru,Jia, Le,Lei, Qiang,&雷强.(2017).Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer.Proceedings of SPIE - The International Society for Optical Engineering,10244,102441W.
MLA	Gao, Yang,et al."Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer".Proceedings of SPIE - The International Society for Optical Engineering 10244(2017):102441W.