Fabrication and photosensitivity of CdS photoresistor on silica nanopillars substrate
Liu J(刘静); Liang YX(梁雅翔); Wang L(王琳); Wang B(王波); Zhang TC(张天冲); Yi FT(伊福廷); Liu, J; Liang, YX; Wang, L; Wang, B; Zhang, TC; Yi, FT
刊名MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2016
卷号56页码:217-221
关键词Nanopillar Substrate Photosensitivity Cadmium sulfide Magnetron sputtering
DOI10.1016/j.mssp.2016.08.024
通讯作者伊福廷
文章类型期刊论文
英文摘要Silica nanopillars are used as substrate for Cadmium sulfide (CdS) photoresistor for the first time. The nanopillars substrate with the large surface ratio can increase the quantity of sensitive material and the surface of light response, which can improve the photosensitivity of the CdS photoresistor obviously. Silicon nanopillars are fabricated by Cesium Chloride (CsCI) self-assembly lithography and inductively coupled plasma (ICP) dry etching, after oxidation, the silicon nanopillars changes to silica nanopillars totally, then the 200 nm thickness CdS film is deposited on the nanopillars surface by RF magnetron sputtering using CdS ceramic target. XRD patterns of the nanopillar and planar substrates after CdS film covering indicate that all the deposited films are crystal. Photosensitivity properties of the photoresistor are tested by a home-made instrument in our group. The test results show that the nanopillar based photoresistor has the higher photosensitivity response than the planar one with different irradiance from 400 to 11,000 mu W/cm(2).. With 10,000 mu W/cm(2) irradiance at the room temperature, the photosensitivity response for the planar sample is only 62, while the response for the nanopillar sample achieves to 137, which is more than double of the planar one. The result reveals that the nanopillars morphology can be used as substrate to increase the property of the photoresistor. (C) 2016 Elsevier Ltd. All rights reserved.
类目[WOS]Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
关键词[WOS]REFLECTION PROPERTIES ; SOLAR-CELLS ; NANOCRYSTALS
语种英语
WOS记录号WOS:000388085800031
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260320
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Liu J,Liang YX,Wang L,et al. Fabrication and photosensitivity of CdS photoresistor on silica nanopillars substrate[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,56:217-221.
APA 刘静.,梁雅翔.,王琳.,王波.,张天冲.,...&Yi, FT.(2016).Fabrication and photosensitivity of CdS photoresistor on silica nanopillars substrate.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,56,217-221.
MLA 刘静,et al."Fabrication and photosensitivity of CdS photoresistor on silica nanopillars substrate".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 56(2016):217-221.
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