Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN

doi:10.1063/1.1773918

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	Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN
	Chen, ZZ; Qin, ZX; Tong, YZ; Hu, XD; Yu, TJ; Yang, ZJ; Yu, LS; Zhang, GY; Zheng, WL; Jia, QJ; Jiang, XM; Zheng WL(郑文莉); Jia QJ(贾全杰); Jiang XM(姜晓明)
	2004
发表期刊	JOURNAL OF APPLIED PHYSICS (IF:2.068[JCR-2016],2.103[5-Year])
卷号	96 期号:4 页码:2091-2094
通讯作者	Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China ; Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100037, Peoples R China
文章类型	Article
摘要	Oxidation of Ni/Au (5 nm/10 nm) contact to p-GaN layer was performed by O-2 plasma in a reactive ion etching system. The structural characteristics of the Ni/Au p-GaN for different oxidation time were investigated by x-ray diffraction (XRD) measurements, using an intense synchrotron x-ray source. The XRD measurements indicated that the grains of nickel oxide polycrystalline in the contact were grown continually when the oxidation time increased in 10 min. However, Au showed amorphouslike and the intensities of Bragg diffraction peaks were hardly changed when oxidation time increased to 10 min. The nickel oxide formed by O-2 plasma without sequent thermal annealing did not reduce the specific contact resistance (rho(c)) to p-GaN, but it took an important role in lowering rho(c) followed by thermal annealing in N-2 at 500degreesC for 10 min. Optical transmission spectra confirmed that the nickel was easy to be oxidized and few interdiffusions occurred at the metal interface in O-2 plasma ambient. Finally, the mechanism of oxidation on the formation of low rho(c) ohmic contact was also discussed. (C) 2004 American Institute of Physics.
学科领域	Physics
DOI	10.1063/1.1773918
URL	查看原文
收录类别	ADS
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000223055100048
ADS Bibcode	2004JAP....96.2091C
ADS URL	https://ui.adsabs.harvard.edu/abs/2004JAP....96.2091C
ADS引文	https://ui.adsabs.harvard.edu/abs/2004JAP....96.2091C/citations
引用统计	正在获取... 被引频次：1 [ADS]
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/239648
专题	多学科研究中心中国科学院高能物理研究所_人力资源处
作者单位	中国科学院高能物理研究所
第一作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Chen, ZZ,Qin, ZX,Tong, YZ,et al. Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN[J]. JOURNAL OF APPLIED PHYSICS,2004,96(4):2091-2094.
APA	Chen, ZZ.,Qin, ZX.,Tong, YZ.,Hu, XD.,Yu, TJ.,...&姜晓明.(2004).Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN.JOURNAL OF APPLIED PHYSICS,96(4),2091-2094.
MLA	Chen, ZZ,et al."Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN".JOURNAL OF APPLIED PHYSICS 96.4(2004):2091-2094.