Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN
Chen, ZZ; Qin, ZX; Tong, YZ; Hu, XD; Yu, TJ; Yang, ZJ; Yu, LS; Zhang, GY; Zheng, WL; Jia, QJ; Jiang, XM; Zheng WL(郑文莉); Jia QJ(贾全杰); Jiang XM(姜晓明)
刊名JOURNAL OF APPLIED PHYSICS
2004
卷号96期号:4页码:2091-2094
学科分类Physics
DOI10.1063/1.1773918
通讯作者Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China ; Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100037, Peoples R China
文章类型Article
英文摘要Oxidation of Ni/Au (5 nm/10 nm) contact to p-GaN layer was performed by O-2 plasma in a reactive ion etching system. The structural characteristics of the Ni/Au p-GaN for different oxidation time were investigated by x-ray diffraction (XRD) measurements, using an intense synchrotron x-ray source. The XRD measurements indicated that the grains of nickel oxide polycrystalline in the contact were grown continually when the oxidation time increased in 10 min. However, Au showed amorphouslike and the intensities of Bragg diffraction peaks were hardly changed when oxidation time increased to 10 min. The nickel oxide formed by O-2 plasma without sequent thermal annealing did not reduce the specific contact resistance (rho(c)) to p-GaN, but it took an important role in lowering rho(c) followed by thermal annealing in N-2 at 500degreesC for 10 min. Optical transmission spectra confirmed that the nickel was easy to be oxidized and few interdiffusions occurred at the metal interface in O-2 plasma ambient. Finally, the mechanism of oxidation on the formation of low rho(c) ohmic contact was also discussed. (C) 2004 American Institute of Physics.
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000223055100048
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/239648
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_人力资源处
作者单位中国科学院高能物理研究所
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Chen, ZZ,Qin, ZX,Tong, YZ,et al. Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN[J]. JOURNAL OF APPLIED PHYSICS,2004,96(4):2091-2094.
APA Chen, ZZ.,Qin, ZX.,Tong, YZ.,Hu, XD.,Yu, TJ.,...&姜晓明.(2004).Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN.JOURNAL OF APPLIED PHYSICS,96(4),2091-2094.
MLA Chen, ZZ,et al."Effects of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN".JOURNAL OF APPLIED PHYSICS 96.4(2004):2091-2094.
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