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Microstructures of Ge/Si superlattices growth at low temperature
Wu, XS; Tan, WS; Jiang, SS; Wu, ZH; Ding, YF; Cheng, HH; Wu ZH(吴忠华); Ding YF(丁永凡)
2003
发表期刊HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
卷号27期号:8页码:739-743
通讯作者Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Taiwan Natl Univ, Ctr Condensed Matter Sci, Taipei, Taiwan
文章类型Article
摘要Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlattice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.
关键词synchrotron X-ray reflectivity and transverse scattering Si/Ge superlattices MBE growth at low temperature
学科领域Physics
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语种英语
WOS研究方向Physics
WOS类目Physics, Nuclear ; Physics, Particles & Fields
WOS记录号WOS:000184730800018
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文献类型期刊论文
条目标识符https://ir.ihep.ac.cn/handle/311005/238399
专题多学科研究中心
作者单位中国科学院高能物理研究所
第一作者单位中国科学院高能物理研究所
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Wu, XS,Tan, WS,Jiang, SS,et al. Microstructures of Ge/Si superlattices growth at low temperature[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2003,27(8):739-743.
APA Wu, XS.,Tan, WS.,Jiang, SS.,Wu, ZH.,Ding, YF.,...&丁永凡.(2003).Microstructures of Ge/Si superlattices growth at low temperature.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,27(8),739-743.
MLA Wu, XS,et al."Microstructures of Ge/Si superlattices growth at low temperature".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 27.8(2003):739-743.
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