Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer

doi:10.1002/ente.201500229

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	Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer
	Liu J(刘静); Zhang XS(张新帅); Sun GJ(孙钢杰); Wang YT(王雨婷); Wang B(王波); Zhang TC(张天冲); Yi FT(伊福廷); Liu; J.; X. Zhang; G. Sun; Y. Wang; B. Wang; T. Zhang; F. Yi; F. Chen
	2015
发表期刊	Energy Technology (IF:2.789[JCR-2016],2.83[5-Year])
卷号	4 期号:2 页码:298-303
通讯作者	伊福廷
文章类型	Article
DOI	10.1002/ente.201500229
收录类别	EI
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/228954
专题	多学科研究中心
推荐引用方式 GB/T 7714	Liu J,Zhang XS,Sun GJ,et al. Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer[J]. Energy Technology,2015,4(2):298-303.
APA	刘静.,张新帅.,孙钢杰.,王雨婷.,王波.,...&F. Chen.(2015).Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer.Energy Technology,4(2),298-303.
MLA	刘静,et al."Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer".Energy Technology 4.2(2015):298-303.