Microstructuring and doping of silicon with nanosecond laser pulses
Li, XH; Chang, LY; Qiu, R; Wen, C; Li, ZH; Hu, SF;李智慧
刊名APPLIED SURFACE SCIENCE
2012
卷号258期号:20页码:8002-8007
关键词Silicon Nanosecond laser pulse Microstructuring Doping Optical properties Electronic properties
学科分类Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2012.04.155
英文摘要We microstructure and dope silicon surfaces in SF6 atmosphere using nanosecond Nd:YAG laser pulses. The effects of scanning speed and laser pulse energy on surface morphology, optical and electronic properties of laser treated silicon are studied. When the scanning speed is 0.2 mm/s and the laser energy is 290 mJ, the absorptance of microstructured silicon can reach 90% in the visible spectrum and 80% in the infrared spectrum. In addition, its Hall mobility is measured as about 600 cm(2) V-1 s(-1). The electron diffraction shows that the irradiated silicon surface is crystalline and no disordered surface layer is found, which is good for optoelectronic applications. (c) 2012 Elsevier B.V. All rights reserved.
收录类别SCI
WOS记录号WOS:000305940700033
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被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/224303
专题中国科学院高能物理研究所_加速器中心_期刊论文
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Li, XH,Chang, LY,Qiu, R,et al. Microstructuring and doping of silicon with nanosecond laser pulses[J]. APPLIED SURFACE SCIENCE,2012,258(20):8002-8007.
APA Li, XH,Chang, LY,Qiu, R,Wen, C,Li, ZH,&Hu, SF;李智慧.(2012).Microstructuring and doping of silicon with nanosecond laser pulses.APPLIED SURFACE SCIENCE,258(20),8002-8007.
MLA Li, XH,et al."Microstructuring and doping of silicon with nanosecond laser pulses".APPLIED SURFACE SCIENCE 258.20(2012):8002-8007.
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