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Microstructuring and doping of silicon with nanosecond laser pulses
Li, XH; Chang, LY; Qiu, R; Wen, C; Li, ZH; Hu, SF;李智慧
2012
发表期刊APPLIED SURFACE SCIENCE (IF:3.387[JCR-2016],3.184[5-Year])
卷号258期号:20页码:8002-8007
摘要We microstructure and dope silicon surfaces in SF6 atmosphere using nanosecond Nd:YAG laser pulses. The effects of scanning speed and laser pulse energy on surface morphology, optical and electronic properties of laser treated silicon are studied. When the scanning speed is 0.2 mm/s and the laser energy is 290 mJ, the absorptance of microstructured silicon can reach 90% in the visible spectrum and 80% in the infrared spectrum. In addition, its Hall mobility is measured as about 600 cm(2) V-1 s(-1). The electron diffraction shows that the irradiated silicon surface is crystalline and no disordered surface layer is found, which is good for optoelectronic applications. (c) 2012 Elsevier B.V. All rights reserved.
关键词Silicon Nanosecond laser pulse Microstructuring Doping Optical properties Electronic properties
学科领域Chemistry; Materials Science; Physics
DOI10.1016/j.apsusc.2012.04.155
收录类别SCI ; ADS
WOS记录号WOS:000305940700033
ADS Bibcode2012ApSS..258.8002L
ADS URLhttps://ui.adsabs.harvard.edu/abs/2012ApSS..258.8002L
ADS引文https://ui.adsabs.harvard.edu/abs/2012ApSS..258.8002L/citations
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被引频次:7 [ADS]
文献类型期刊论文
条目标识符https://ir.ihep.ac.cn/handle/311005/224303
专题加速器中心
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Li, XH,Chang, LY,Qiu, R,et al. Microstructuring and doping of silicon with nanosecond laser pulses[J]. APPLIED SURFACE SCIENCE,2012,258(20):8002-8007.
APA Li, XH,Chang, LY,Qiu, R,Wen, C,Li, ZH,&Hu, SF;李智慧.(2012).Microstructuring and doping of silicon with nanosecond laser pulses.APPLIED SURFACE SCIENCE,258(20),8002-8007.
MLA Li, XH,et al."Microstructuring and doping of silicon with nanosecond laser pulses".APPLIED SURFACE SCIENCE 258.20(2012):8002-8007.
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