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Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 12, 页码: 125022
Authors:  Liu, Tao;  Wang, Liming;  Zhu, Guangjian;  Hu, Xiaofeng;  Dong, Zuoru;  Zhong, Zhenyang;  Jia, Quanjie;  Yang, Xinju;  Jiang, Zuimin;  Jia QJ(贾全杰)
Adobe PDF(1153Kb)  |  Favorite  |  View/Download:144/0  WOS cited times:[0]  ADS cited times:[6]  |  Submit date:2019/10/11
GeSn  dislocation-related photoluminescence  molecular beam epitaxy  microstructure  x-ray diffraction reciprocal space mapping