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Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 11, 页码: 2784-2792
Authors:  Wang, Lei;  Liu, Ningyang;  Song LG(宋力刚);  Cao XZ(曹兴忠);  Wang BY(王宝义);  Song, Ligang;  Li, Bo;  Liu, Yanqiu;  Cui, Yan;  Li, Binhong;  Zheng, Zhongshan;  Chen, Zhitao;  Gong, Zheng;  Zhao, Wei;  Cao, Xingzhong;  Wang, Baoyi;  Luo, Jiajun;  Han, Zhengsheng
Adobe PDF(2657Kb)  |  Favorite  |  View/Download:138/0  WOS cited times:[0]  ADS cited times:[3]  |  Submit date:2019/10/11
Atom displacement  carrier removal effect  carrier ultrafast dynamics  GaN  indium localization  light-emitting diodes (LEDs)  nonradiative recombination centers (NRCs)  positron annihilation spectroscopy (PAS)  silicon ion irradiation  strain relaxation  
A comparative study on ferromagnetic C/O-implanted GaN films by positron annihilation spectroscopy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 卷号: 375, 页码: 107-111
Authors:  Xu, JP;  Li Q(李强);  Li, Q;  Liu, JD;  Ye, BJ
Adobe PDF(1418Kb)  |  Favorite  |  View/Download:90/1  WOS cited times:[0]  ADS cited times:[1]  |  Submit date:2016/08/29
Ions implantation technology  Positron annihilation spectroscopy  Vacancy-related defects  Room temperature ferromagnetism  GaN films  
Control of the Metal-Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2015, 卷号: 7, 期号: 12, 页码: 6875-6881
Authors:  Chen, FH;  Fan, LL;  Chen, S;  Liao, GM;  Chen, YL;  Wu, P;  Song, L;  Zou, CW;  Wu, ZY;  Wu ZY(吴自玉)
Adobe PDF(1621Kb)  |  Favorite  |  View/Download:131/4  WOS cited times:[0]  |  Submit date:2016/04/18
vanadium dioxide  p-GaN  phase transition modulation  carrier concentration  
AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN 期刊论文
MODERN PHYSICS LETTERS B, 2014, 卷号: 28, 期号: 4, 页码: 1450031
Authors:  Cheng, J;  Zhou, J;  徐伟; Xu, W;  Dong, P
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Diluted magnetic semiconductors  Fe-doped GaN  first principles calculation  ferromagnetism  
GaN厚膜中的质子辐照诱生缺陷研究 期刊论文
物理学报, 2013, 期号: 11, 页码: 435-438
Authors:  张明兰;  杨瑞霞;  李卓昕;  曹兴忠;  王宝义;  王晓晖
Adobe PDF(290Kb)  |  Favorite  |  View/Download:181/3  |  Submit date:2015/12/25
GaN  缺陷  质子  辐照  
Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 53-56
Authors:  An TL(安铁雷);  Sun B(孙波);  Wei TB(魏同波);  Zhao LX(赵丽霞);  Duan RF(段瑞飞);  Liao YX(廖元勋);  Li JM(李晋闽);  Yi FT(伊福廷)
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freestanding GaN  flip chip  LED  CsCl  wet etching  light extraction  
Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文
MATERIALS LETTERS, 2012, 卷号: 68, 页码: 327-330
Authors:  Wei, TB;  Chen, Y;  Hu, Q;  Yang, JK;  Huo, ZQ;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM;  Liao, YX;  Yin, FT;廖元勋;  Yi FT(伊福廷)
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HVPE  GaN  CsCl  Nano-island  
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 5, 页码: 57802
Authors:  Zhao, DG;  Zhang, S;  Liu, WB;  Hao, XP;  Jiang, DS;  Zhu, JJ;  Liu, ZS;  Wang, H;  Zhang, SM;  Yang, H;  Wei, L;  Wei L(魏龙)
Adobe PDF(336Kb)  |  Favorite  |  View/Download:70/0  WOS cited times:[0]  ADS cited times:[8]  |  Submit date:2016/06/29
Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
Chinese Physics B, 2010, 期号: 5, 页码: 571-574
Authors:  Zhao DG(赵德刚);  Zhang S(张爽);  Liu WB(刘文宝);  Hao XP(郝小鹏);  Jiang DS(江德生);  Zhu JJ(朱建军);  Liu ZS(刘宗顺);  Wang H(王辉);  Zhang SM(张书明);  Yang H(杨辉);  Wei L(魏龙)
Adobe PDF(478Kb)  |  Favorite  |  View/Download:96/0  ADS cited times:[8]  |  Submit date:2015/12/25
Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  
Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes 期刊论文
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 卷号: 29, 期号: 6, 页码: 1441-1444
Authors:  Chen, WH;  Liao, H;  Hu, XD;  Li, R;  Jia, QJ;  Jin, YH;  Du, WM;  Yang, ZJ;  Zhang, GY;  Jia QJ(贾全杰)
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GaN-based LD  Multi-quantum-well (MQW)  AlInGaN  Barrier material