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Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 12, 页码: 125022
Authors:  Liu, Tao;  Wang, Liming;  Zhu, Guangjian;  Hu, Xiaofeng;  Dong, Zuoru;  Zhong, Zhenyang;  Jia, Quanjie;  Yang, Xinju;  Jiang, Zuimin;  Jia QJ(贾全杰)
Adobe PDF(1153Kb)  |  Favorite  |  View/Download:135/0  WOS cited times:[0]  ADS cited times:[6]  |  Submit date:2019/10/11
GeSn  dislocation-related photoluminescence  molecular beam epitaxy  microstructure  x-ray diffraction reciprocal space mapping  
铁锰铝铬合金局域结构的近边X射线吸收精细结构研究 期刊论文
浙江大学学报(自然科学版), 1998, 期号: 6, 页码: 136-142
Authors:  陈才金;  刘卫丽;  唐景昌;  汪雷;  徐纯一;  何江平;  胡晓风;  胡天斗;  刘涛
Adobe PDF(210Kb)  |  Favorite  |  View/Download:154/1  |  Submit date:2015/12/25
铁锰铝铬合金  X射线吸收谱  精细结构