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Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 12, 页码: 125022
Authors:  Liu, Tao;  Wang, Liming;  Zhu, Guangjian;  Hu, Xiaofeng;  Dong, Zuoru;  Zhong, Zhenyang;  Jia, Quanjie;  Yang, Xinju;  Jiang, Zuimin;  Jia QJ(贾全杰)
Adobe PDF(1153Kb)  |  Favorite  |  View/Download:138/0  WOS cited times:[0]  ADS cited times:[6]  |  Submit date:2019/10/11
GeSn  dislocation-related photoluminescence  molecular beam epitaxy  microstructure  x-ray diffraction reciprocal space mapping  
Two-dimensional hexagonal M3C2 (M = Zn, Cd and Hg) monolayers: novel quantum spin Hall insulators and Dirac cone materials 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 35, 页码: 9181-9187
Authors:  Liu PF(刘鹏飞);  Liu, PF;  Zhou, LJ;  Tretiak, S;  Wu, LM
Adobe PDF(2231Kb)  |  Favorite  |  View/Download:86/0  WOS cited times:[0]  |  Submit date:2019/08/27
State of the art in Microfabrication 会议论文
TIPP 2014 is the third Technology and Instrumentation in Particle Physi, Amsterdam, 2014
Authors:  J. Schmitz
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Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 8, 页码: 88112
Authors:  Tao, P;  Huang, L;  Cheng, HH;  Wang, HH;  Wu, XS;王焕华
Adobe PDF(569Kb)  |  Favorite  |  View/Download:151/5  WOS cited times:[0]  ADS cited times:[4]  |  Submit date:2016/04/08
GeSn films  high resolution X-ray diffraction  fully-strained  Raman measurements  
Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 53, 期号: 4, 页码: 41301
Authors:  赵梅;Zhao, M;  Liu, L;  Liang, RR;  Wang, J;  Xu, J
Adobe PDF(627Kb)  |  Favorite  |  View/Download:88/0  WOS cited times:[0]  ADS cited times:[2]  |  Submit date:2016/04/08
超核物理 期刊论文
自然杂志, 1983, 期号: 6, 页码: 573-578+585-640
Authors:  厉光烈
Adobe PDF(1015Kb)  |  Favorite  |  View/Download:154/1  |  Submit date:2015/12/10
原子核结构  靶核  基本相互作用  衰变方式  原子核物理  奇异数  壳模型  能级宽度  质子束  高自旋态