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Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 11, 页码: 2784-2792
Authors:  Wang, Lei;  Liu, Ningyang;  Song LG(宋力刚);  Cao XZ(曹兴忠);  Wang BY(王宝义);  Song, Ligang;  Li, Bo;  Liu, Yanqiu;  Cui, Yan;  Li, Binhong;  Zheng, Zhongshan;  Chen, Zhitao;  Gong, Zheng;  Zhao, Wei;  Cao, Xingzhong;  Wang, Baoyi;  Luo, Jiajun;  Han, Zhengsheng
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Atom displacement  carrier removal effect  carrier ultrafast dynamics  GaN  indium localization  light-emitting diodes (LEDs)  nonradiative recombination centers (NRCs)  positron annihilation spectroscopy (PAS)  silicon ion irradiation  strain relaxation  
Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy 期刊论文
MATERIALS LETTERS, 2017, 卷号: 191, 页码: 97-100
Authors:  Ablat, A;  Mamat, M;  Ghupur, Y;  Aimidula, A;  Wu, R;  Baqi, MA;  Gholam, T;  Wang, JO;  Qian, HJ;  Wu, R;  Ibrahim, K;  Wang JO(王嘉鸥);  Qian HJ(钱海杰);  Wu R(吴蕊);  Kui RX(奎热西)
Adobe PDF(718Kb)  |  Favorite  |  View/Download:112/0  WOS cited times:[0]  |  Submit date:2019/08/27
La2O3  High-k  Structural  X-ray techniques  Interface  
博士论文-注砷ZnO晶体的导电机制与点缺陷结构的漫散射研究 学位论文
博士, 北京: 中国科学院研究生院, 2012
Authors:  苑梦尧
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注砷ZnO  p型  导电机制  点缺陷  X射线漫散射  
Fe-doped InN layers grown by molecular beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 17, 页码: 171905
Authors:  Wang, XQ;  Liu, ST;  Ma, DY;  Zheng, XT;  Chen, G;  Xu, FJ;  Tang, N;  Shen, B;  Zhang, P;  Cao, XZ;  Wang, BY;  Huang, S;  Chen, KJ;  Zhou, SQ;  Yoshikawa, A;张鹏(正);  Cao XZ(曹兴忠);  Wang BY(王宝义)
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用同步辐射X射线漫散射研究p型ZnO性能退化的微结构根源 项目
2010-2012
Leaders:  王焕华
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X射线漫散射  p型ZnO  缺陷  微结构  退化机制  
Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 卷号: 397, 期号: 1-2, 页码: #REF!
Authors:  Tan, WS;  Cai, HL;  Wu, XS;  Jiang, SS;  Zheng, WL;  Jia, QJ;  Zheng WL(郑文莉);  Jia QJ(贾全杰)
Adobe PDF(203Kb)  |  Favorite  |  View/Download:169/8  WOS cited times:[0]  |  Submit date:2016/04/12
AlGaN/GaN heterostructure  reciprocal space mappings  strain relaxation  grazing incidence X-ray diffraction  
Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 卷号: 18, 期号: 7, 页码: 989-998
Authors:  Tan, WS;  Shen, B;  Sha, H;  Cai, HL;  Wu, XS;  Zheng, YD;  Jiang, SS;  Zheng, WL;  Jia, QJ;  He, Q;  Zheng WL(郑文莉);  Jia QJ(贾全杰);  He Q(何庆)
Adobe PDF(1396Kb)  |  Favorite  |  View/Download:103/1  WOS cited times:[0]  ADS cited times:[1]  |  Submit date:2016/06/29
high resolution X-ray diffraction  metal organic chemical vapor deposition  reciprocal space mapping  semiconducting III-V nitride  strain relaxation  relaxation line model  
AlGaN/GaN异质结构的X射线衍射研究 期刊论文
核技术, 2004, 期号: 6, 页码: 413-416
Authors:  谭伟石;  徐金;  蔡宏灵;  沈波;  吴小山;  蒋树声;  郑文莉;  贾全杰
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AlGaN/GaN异质结构  倒易空间Mapping  应变弛豫  掠入射X射线衍射  
Wafer bonding technique used for the integration o 期刊论文
中国科学(英文版), 2002, 期号: 3, 页码: 255-260
Authors:  Sun YP(孙元平);  Fu Y(付羿);  Qu B(渠波);  Wang YT(王玉田);  Feng ZH(冯志宏);  Shen XM(沈小明);  Zhao DG(赵德刚);  Zheng XH(郑新和);  Duan LH(段俐宏);  Li BC(李秉臣);  Zhang SM(张书明);  Yang H(杨辉);  Jiang XM(姜晓明);  Zheng WL(郑文莉);  Jia QJ(贾全杰)
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调制掺杂AlxGa1-xN/GaN异质结构的微应变 期刊论文
核技术, 2002, 期号: 10, 页码: 799-896
Authors:  谭伟石;  沙昊;  沈波;  蔡宏灵;  吴小山;  蒋树声;  郑文莉;  贾全杰;  姜晓明
Adobe PDF(283Kb)  |  Favorite  |  View/Download:136/0  |  Submit date:2016/01/25
AlxGa1-xN/GaN异质结构  高分辨X射线衍射  微结构  应变  弛豫线模型