IHEP OpenIR

浏览/检索结果: 共1条,第1-1条 帮助

已选(0)清除 条数/页:   排序方式:
Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 卷号: 18, 期号: 7, 页码: 989-998
作者:  Tan, WS;  Shen, B;  Sha, H;  Cai, HL;  Wu, XS;  Zheng, YD;  Jiang, SS;  Zheng, WL;  Jia, QJ;  He, Q;  Zheng WL(郑文莉);  Jia QJ(贾全杰);  He Q(何庆)
Adobe PDF(1396Kb)  |  收藏  |  浏览/下载:177/1  WOS被引:[0]  ADS被引:[1]  |  提交时间:2016/06/29
high resolution X-ray diffraction  metal organic chemical vapor deposition  reciprocal space mapping  semiconducting III-V nitride  strain relaxation  relaxation line model  
  • 首页
  • 上一页
  • 1
  • 下一页
  • 末页