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Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 12, 页码: 125022
作者:  Liu, Tao;  Wang, Liming;  Zhu, Guangjian;  Hu, Xiaofeng;  Dong, Zuoru;  Zhong, Zhenyang;  Jia, Quanjie;  Yang, Xinju;  Jiang, Zuimin;  Jia QJ(贾全杰)
Adobe PDF(1153Kb)  |  收藏  |  浏览/下载：194/0  WOS被引：[0]  ADS被引：[7]  |  提交时间：2019/10/11
GeSn  dislocation-related photoluminescence  molecular beam epitaxy  microstructure  x-ray diffraction reciprocal space mapping  
High resolution X-ray diffraction investigation of epitaxially grown SrTiO_3 thin films by laser-MBE 期刊论文
中国物理C, 2009, 期号: 11, 页码: 949-953
作者:  Zhai ZY(翟章印);  Wu XS(吴小山);  Jia QJ(贾全杰)
Adobe PDF(403Kb)  |  收藏  |  浏览/下载：170/1  |  提交时间：2015/12/25
laser-MBE  grazing incident X-ray diffraction  reciprocal space mapping  
High resolution X-ray diffraction investigation of epitaxially grown SrTiO3 thin films by laser-MBE 期刊论文
CHINESE PHYSICS C, 2009, 卷号: 33, 期号: 11, 页码: 949-953
作者:  Zhai, ZY;  Wu, XS;  Jia QJ(贾全杰);  Jia, QJ
Adobe PDF(2428Kb)  |  收藏  |  浏览/下载：128/1  WOS被引：[0]  |  提交时间：2016/06/29
laser-MBE  grazing incident X-ray diffraction  reciprocal space mapping  
Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 卷号: 18, 期号: 7, 页码: 989-998
作者:  Tan, WS;  Shen, B;  Sha, H;  Cai, HL;  Wu, XS;  Zheng, YD;  Jiang, SS;  Zheng, WL;  Jia, QJ;  He, Q;  Zheng WL(郑文莉);  Jia QJ(贾全杰);  He Q(何庆)
Adobe PDF(1396Kb)  |  收藏  |  浏览/下载：172/1  WOS被引：[0]  ADS被引：[1]  |  提交时间：2016/06/29
high resolution X-ray diffraction  metal organic chemical vapor deposition  reciprocal space mapping  semiconducting III-V nitride  strain relaxation  relaxation line model  
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