| Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy | |
Liu, Tao; Wang, Liming ; Zhu, Guangjian; Hu, Xiaofeng; Dong, Zuoru; Zhong, Zhenyang; Jia, Quanjie; Yang, Xinju; Jiang, Zuimin; Jia QJ(贾全杰)
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| 2018 | |
| Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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| ISSN | 0268-1242 |
| EISSN | 1361-6641 |
| Volume | 33Issue:12Pages:125022 |
| Subtype | Article |
| Abstract | This paper reports the dislocation-related photoluminescence (PL) in GeSn films The GeSn film samples with Sn content of 1%-7.4% were grown on Ge (001) substrates by molecular beam epitaxy at low temperatures. Dislocations at the interface between the GeSn and the Ge buffer layer as well as the threading dislocations throughout the GeSn layer were observed for the annealed samples, but not for the as-grown samples. PL peaks of the annealed GeSn film samples show a significant red shift with increasing Sn content. However, a large energy difference (122 meV) between the PL peak energy and theoretically calculated indirect bandgap energy was found for all the GeSn films with different Sn contents. Furthermore, the PL peak position as a function of temperature could be well fitted by the calculated E g -T line, indicating that the PL observed in the GeSn films is dislocation-related PL. |
| Keyword | GeSn dislocation-related photoluminescence molecular beam epitaxy microstructure x-ray diffraction reciprocal space mapping |
| DOI | 10.1088/1361-6641/aaed82 |
| WOS Keyword | ROOM-TEMPERATURE ; LIGHT-EMISSION ; ENGINEERED SILICON ; OPTICAL-PROPERTIES ; SI ; GERMANIUM ; STRAIN ; ALLOYS ; LAYERS ; LASER |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS Research Area | Engineering ; Materials Science ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| WOS ID | WOS:000450304600001 |
| EI Accession Number | 20184906204693 |
| ADS Bibcode | 2018SeScT..33l5022L |
| Citation statistics |
Cited Times:6 [ADS]
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| Document Type | 期刊论文 |
| Identifier | http://ir.ihep.ac.cn/handle/311005/286895 |
| Collection | 多学科研究中心 |
| Affiliation | 中国科学院高能物理研究所 |
| First Author Affilication | Institute of High Energy |
| Recommended Citation GB/T 7714 | Liu, Tao,Wang, Liming,Zhu, Guangjian,et al. Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(12):125022. |
| APA | Liu, Tao.,Wang, Liming.,Zhu, Guangjian.,Hu, Xiaofeng.,Dong, Zuoru.,...&贾全杰.(2018).Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(12),125022. |
| MLA | Liu, Tao,et al."Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.12(2018):125022. |
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