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Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy
Liu, Tao; Wang, Liming; Zhu, Guangjian; Hu, Xiaofeng; Dong, Zuoru; Zhong, Zhenyang; Jia, Quanjie; Yang, Xinju; Jiang, Zuimin; Jia QJ(贾全杰)
2018
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
EISSN1361-6641
Volume33Issue:12Pages:125022
SubtypeArticle
AbstractThis paper reports the dislocation-related photoluminescence (PL) in GeSn films The GeSn film samples with Sn content of 1%-7.4% were grown on Ge (001) substrates by molecular beam epitaxy at low temperatures. Dislocations at the interface between the GeSn and the Ge buffer layer as well as the threading dislocations throughout the GeSn layer were observed for the annealed samples, but not for the as-grown samples. PL peaks of the annealed GeSn film samples show a significant red shift with increasing Sn content. However, a large energy difference (122 meV) between the PL peak energy and theoretically calculated indirect bandgap energy was found for all the GeSn films with different Sn contents. Furthermore, the PL peak position as a function of temperature could be well fitted by the calculated E g -T line, indicating that the PL observed in the GeSn films is dislocation-related PL.
KeywordGeSn dislocation-related photoluminescence molecular beam epitaxy microstructure x-ray diffraction reciprocal space mapping
DOI10.1088/1361-6641/aaed82
WOS KeywordROOM-TEMPERATURE ; LIGHT-EMISSION ; ENGINEERED SILICON ; OPTICAL-PROPERTIES ; SI ; GERMANIUM ; STRAIN ; ALLOYS ; LAYERS ; LASER
Indexed BySCI ; EI
Language英语
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS IDWOS:000450304600001
EI Accession Number20184906204693
ADS Bibcode2018SeScT..33l5022L
Citation statistics
Cited Times:6 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/286895
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Liu, Tao,Wang, Liming,Zhu, Guangjian,et al. Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(12):125022.
APA Liu, Tao.,Wang, Liming.,Zhu, Guangjian.,Hu, Xiaofeng.,Dong, Zuoru.,...&贾全杰.(2018).Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(12),125022.
MLA Liu, Tao,et al."Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.12(2018):125022.
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