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Independence of topological surface state and bulk conductance in three-dimensional topological insulators | |
Cai, Shu; Guo, Jing![]() ![]() ![]() ![]() | |
2018 | |
Source Publication | NPJ QUANTUM MATERIALS
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ISSN | 2397-4648 |
Volume | 3Issue:1Pages:1-6 |
Subtype | Article |
DOI | 10.1038/s41535-018-0134-z |
Language | 英语 |
ADS Bibcode | 2018npjQM...3...62C |
AXRIV CODE | 1807 |
Citation statistics |
Cited Times:27 [ADS]
|
Document Type | 期刊论文 |
Identifier | http://ir.ihep.ac.cn/handle/311005/286878 |
Collection | 核技术应用研究中心 多学科研究中心 |
Affiliation | 中国科学院高能物理研究所 |
First Author Affilication | Institute of High Energy |
Recommended Citation GB/T 7714 | Cai, Shu,Guo, Jing,Sidorov, Vladimir A.,et al. Independence of topological surface state and bulk conductance in three-dimensional topological insulators[J]. NPJ QUANTUM MATERIALS,2018,3(1):1-6. |
APA | Cai, Shu.,Guo, Jing.,Sidorov, Vladimir A..,Zhou, Yazhou.,Wang, Honghong.,...&李延春.(2018).Independence of topological surface state and bulk conductance in three-dimensional topological insulators.NPJ QUANTUM MATERIALS,3(1),1-6. |
MLA | Cai, Shu,et al."Independence of topological surface state and bulk conductance in three-dimensional topological insulators".NPJ QUANTUM MATERIALS 3.1(2018):1-6. |
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