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Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films
Sun, XK; Lin, Z; Wu ZH(吴忠华); Wu, ZH; An, YK
2018
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
Volume122Issue:32Pages:18759-18768
SubtypeArticle
AbstractThe influences of oxygen partial pressure on the local structure, magnetic, and transport properties of (In0.89Fe0.06Cu0.05)(2)O-3 films deposited by different Ar-O-2 flow rate (10:0, 10:0.4, and 10:3.0) were studied systematically by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), Hall effect, room temperature (RT) magnetic measurements, and first-principles calculations. The detailed structural analyses indicate that the doped Fe atoms substitute for In3+ sites of the In2O3 lattices with +2 and +3 mixture valences for all the films. However, the majority of codoped Cu atoms form the Cu metal clusters in the film deposited at oxygen flow rate of 0 sccm. With increasing oxygen partial pressure, the Cu metal clusters completely disappear and all the Cu atoms are incorporated substitutionally into the In2O3 lattices at In sites. All the films exhibit intrinsic RT ferromagnetism, and Mott variable range hopping (VRH) transport behavior. The saturation magnetization (M-s) of the films monotonically decreases with increasing oxygen partial pressure, implying that the M-s strongly correlates with the concentration of oxygen vacancies. The first-principles calculations suggest that the oxygen vacancy can act to mediate the superexchange interaction between Fe atoms, leading to a ferromagnetic ground state in Fe-doped In2O3 system. However, the Cu codoping cannot be responsible for the observed ferromagnetic ordering in Fe/Cu codoped In2O3 system. The stable ferromagnetic ground state only can be obtained by the coexistence of oxygen vacancy and Cu codoping in the system. Therefore, it can be concluded that the bound magnetic polarons (BMP) involving oxygen vacancy defects may be responsible for the observed intrinsic ferromagnetic coupling, which can be remarkably influenced by the localization effect of carriers in the (In0.89Fe0.06Cu0.05)(2)O-3 films. These results provide a new sight for designing and manipulating the magnetic interaction of In2O3-based DMS systems.
DOI10.1021/acs.jpcc.8b05058
WOS KeywordHIGH-TEMPERATURE FERROMAGNETISM ; INDIUM-TIN OXIDE ; DOPED IN2O3 ; THIN-FILMS ; SEMICONDUCTORS ; NANOPARTICLES ; BULK ; TRANSPARENT ; DEPOSITION
Indexed BySCI ; EI
Language英语
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000442462400060
EI Accession Number20183105641172
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/286257
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Sun, XK,Lin, Z,Wu ZH,et al. Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2018,122(32):18759-18768.
APA Sun, XK,Lin, Z,吴忠华,Wu, ZH,&An, YK.(2018).Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films.JOURNAL OF PHYSICAL CHEMISTRY C,122(32),18759-18768.
MLA Sun, XK,et al."Influences of Oxygen Partial Pressure on the Cu Metal Clustering and Room Ferromagnetism of the (In0.89Fe0.06Cu0.05)(2)O-3 Films".JOURNAL OF PHYSICAL CHEMISTRY C 122.32(2018):18759-18768.
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