| High quality PdTe2 thin films grown by molecular beam epitaxy | |
Li, E; Zhang, RZ; Li, H; Liu, C ; Li, G; Wang, JO; Qian, T; Ding, H; Zhang, YY; Du, SX; Lin, X; Gao, HJ; Liu C(刘晨); Wang JO(王嘉鸥)
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| 2018 | |
| Source Publication | CHINESE PHYSICS B
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| ISSN | 1674-1056 |
| EISSN | 1741-4199 |
| Volume | 27Issue:8Pages:86804 |
| Subtype | Article |
| Abstract | PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the interplay between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spectroscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices. |
| Keyword | two-dimensional materials transition-metal dichalcogenides PdTe2 molecular beam epitaxy |
| DOI | 10.1088/1674-1056/27/8/086804 |
| WOS Keyword | TRANSITION-METAL-DICHALCOGENIDE ; SUPERCONDUCTIVITY ; MINERALS ; TE |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000442030200004 |
| CSCD ID | CSCD:6320944 |
| EI Accession Number | 20183405715925 |
| ADS Bibcode | 2018ChPhB..27h6804L |
| Citation statistics |
Cited Times:18 [ADS]
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| Document Type | 期刊论文 |
| Identifier | http://ir.ihep.ac.cn/handle/311005/286225 |
| Collection | 多学科研究中心 中国科学院高能物理研究所_中国散裂中子源 |
| Affiliation | 中国科学院高能物理研究所 |
| First Author Affilication | Institute of High Energy |
| Recommended Citation GB/T 7714 | Li, E,Zhang, RZ,Li, H,et al. High quality PdTe2 thin films grown by molecular beam epitaxy[J]. CHINESE PHYSICS B,2018,27(8):86804. |
| APA | Li, E.,Zhang, RZ.,Li, H.,Liu, C.,Li, G.,...&王嘉鸥.(2018).High quality PdTe2 thin films grown by molecular beam epitaxy.CHINESE PHYSICS B,27(8),86804. |
| MLA | Li, E,et al."High quality PdTe2 thin films grown by molecular beam epitaxy".CHINESE PHYSICS B 27.8(2018):86804. |
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