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High quality PdTe2 thin films grown by molecular beam epitaxy
Li, E; Zhang, RZ; Li, H; Liu, C; Li, G; Wang, JO; Qian, T; Ding, H; Zhang, YY; Du, SX; Lin, X; Gao, HJ; Liu C(刘晨); Wang JO(王嘉鸥)
2018
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
EISSN1741-4199
Volume27Issue:8Pages:86804
SubtypeArticle
AbstractPdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the interplay between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spectroscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.
Keywordtwo-dimensional materials transition-metal dichalcogenides PdTe2 molecular beam epitaxy
DOI10.1088/1674-1056/27/8/086804
WOS KeywordTRANSITION-METAL-DICHALCOGENIDE ; SUPERCONDUCTIVITY ; MINERALS ; TE
Indexed BySCI ; EI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000442030200004
CSCD IDCSCD:6320944
EI Accession Number20183405715925
ADS Bibcode2018ChPhB..27h6804L
Citation statistics
Cited Times:18 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/286225
Collection多学科研究中心
中国科学院高能物理研究所_中国散裂中子源
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Li, E,Zhang, RZ,Li, H,et al. High quality PdTe2 thin films grown by molecular beam epitaxy[J]. CHINESE PHYSICS B,2018,27(8):86804.
APA Li, E.,Zhang, RZ.,Li, H.,Liu, C.,Li, G.,...&王嘉鸥.(2018).High quality PdTe2 thin films grown by molecular beam epitaxy.CHINESE PHYSICS B,27(8),86804.
MLA Li, E,et al."High quality PdTe2 thin films grown by molecular beam epitaxy".CHINESE PHYSICS B 27.8(2018):86804.
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