Boosting the thermoelectric performance of Bi2O2Se by isovalent doping

doi:10.1111/jace.15720

IHEP OpenIR > 多学科研究中心

	Boosting the thermoelectric performance of Bi2O2Se by isovalent doping
	Tan, X; Lan, JL; Hu, KR; Xu, B; Liu, YC; Zhang, P; Cao, XZ; Zhu, YC; Xu, W; Lin, YH; Nan, CW; 张鹏(正); Cao XZ(曹兴忠)
	2018
发表期刊	JOURNAL OF THE AMERICAN CERAMIC SOCIETY (IF:2.841[JCR-2016],2.884[5-Year])
ISSN	0002-7820
EISSN	1551-2916
卷号	101 期号:10 页码:4634-4644
文章类型	Article
摘要	N-type Bi2O2Se has a bright prospect for mid-temperature thermoelectric applications on account of the intrinsically low thermal conductivity. However, the low carrier concentration of Bi2O2Se (similar to 10(15)cm(-3)) severely limits its thermoelectric performance. Herein, the boosting of the carrier concentration to similar to 10(19) cm(-3) can be realized in our La-doped Bi2O2Se ceramic samples, which could be ascribed to the formation of isoelectronic traps and the narrowing of band gap, and contribute to a marked increase in the electrical conductivity (from 0.03S cm(-1) to 182Scm(-1)). Our X-ray absorption near-edge structure spectra results reveal that a local disordering of oxygen atoms could be an important reason for the intrinsically low thermal conductivity of Bi2O2Se, and the point defects can also suppress the lattice thermal conductivity in La-doped Bi2O2Se. The ZT value can be enhanced by a factor of similar to 4.5 to 0.35 at 823K for Bi1.98La0.02O2Se as compared to the pristine Bi2O2Se. The coordinated optimization of electrical and thermal properties demonstrates an effective method for the rational design of high-performance thermoelectric materials.
关键词	dopants doping electrical conductivity thermal conductivity thermoelectric properties
DOI	10.1111/jace.15720
关键词[WOS]	TRANSPORT-PROPERTIES ; SINGLE-CRYSTALS ; CERAMICS ; BICUSEO ; ENHANCEMENT ; DEFICIENCY ; PHOSPHIDE ; SRTIO3 ; POWER ; TE
收录类别	SCI ; EI
语种	英语
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
WOS记录号	WOS:000440554000030
EI入藏号	20181905138492
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/286173
专题	多学科研究中心粒子天体物理中心
作者单位	中国科学院高能物理研究所
第一作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Tan, X,Lan, JL,Hu, KR,et al. Boosting the thermoelectric performance of Bi2O2Se by isovalent doping[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2018,101(10):4634-4644.
APA	Tan, X.,Lan, JL.,Hu, KR.,Xu, B.,Liu, YC.,...&曹兴忠.(2018).Boosting the thermoelectric performance of Bi2O2Se by isovalent doping.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,101(10),4634-4644.
MLA	Tan, X,et al."Boosting the thermoelectric performance of Bi2O2Se by isovalent doping".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 101.10(2018):4634-4644.