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Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4
Zhu YC(朱英才); Zhu, YC; Liu, Y; Tan, X; Ren, GK; Yu, MJ; Hu, TD; Marcelli, A; Xu, W; Yu MJ(于梅娟); Hu TD(胡天斗); Xu W(徐伟)
2018
Source PublicationAIP ADVANCES
ISSN2158-3226
Volume8Issue:4Pages:45218
SubtypeArticle
AbstractQuaternary chalcogenide Cu2ZnSnSe4 (CZTSe) is a promising wide band-gap p-type thermoelectric material. The structure and thermoelectric properties of lead substituted Cu2ZnSn1-xPbxSe4 are investigated. Lead primarily exists in the framework of PbSe as demonstrated by x-ray diffraction and calculation of x-ray absorption near-edge structure spectroscopy. The second phase distributes at the boundaries of CZTSe with thickness in several hundreds of nanometer. With appropriate grain boundary engineering, the enhancement of power factor and a decrease of thermal conductivity can be achieved simultaneously. As a result, a maximum figure of merit zT of 0.45 is obtained for the sample with x = 0.02 at 723K. (c) 2018Author(s).
DOI10.1063/1.5025482
WOS KeywordBULK THERMOELECTRICS ; NANOCRYSTALS
Indexed BySCI ; EI
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000435454600066
EI Accession Number20181705056726
ADS Bibcode2018AIPA....8d5218Z
Citation statistics
Cited Times:3 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/286030
Collection多学科研究中心
Corresponding AuthorXu W(徐伟)
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Corresponding Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Zhu YC,Zhu, YC,Liu, Y,et al. Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4[J]. AIP ADVANCES,2018,8(4):45218.
APA 朱英才.,Zhu, YC.,Liu, Y.,Tan, X.,Ren, GK.,...&徐伟.(2018).Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4.AIP ADVANCES,8(4),45218.
MLA 朱英才,et al."Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4".AIP ADVANCES 8.4(2018):45218.
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