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Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing
Zhu. Y.; X. Wang; C. Liu; T. Wang; H. Chen; W.-H. Wang; Y. Cheng; W. Wang; J. Wang; S. Wang; K. Cho; H. Liu; H. Lu and H. Dong; Liu C(刘晨); Wang JO(王嘉鸥)
2017
Source PublicationSurfaces and Interfaces
ISSN2571-9637
Volume9Issue:12Pages:51-57
SubtypeArticle
DOI10.1016/j.surfin.2017.07.006
Language英语
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/285367
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Zhu. Y.,X. Wang,C. Liu,et al. Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing[J]. Surfaces and Interfaces,2017,9(12):51-57.
APA Zhu. Y..,X. Wang.,C. Liu.,T. Wang.,H. Chen.,...&王嘉鸥.(2017).Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing.Surfaces and Interfaces,9(12),51-57.
MLA Zhu. Y.,et al."Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing".Surfaces and Interfaces 9.12(2017):51-57.
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