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Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy
Ablat, A; Mamat, M; Ghupur, Y; Aimidula, A; Wu, R; Baqi, MA; Gholam, T; Wang, JO; Qian, HJ; Wu, R; Ibrahim, K; Wang JO(王嘉鸥); Qian HJ(钱海杰); Wu R(吴蕊); Kui RX(奎热西)
2017
Source PublicationMATERIALS LETTERS
ISSN0167-577X
EISSN1873-4979
Volume191Pages:97-100
SubtypeArticle
AbstractA study of the interface between La2O3 films and Si substrates was conducted with the aim to understand interfacial change during the film growth process. A detailed comparison of Si 2s, 2p, and O 1s photoelectron spectra of the La2O3/Si interface formed on clean silicon substrates indicates that a La-silicate phase forms rapidly at the interface during the film deposition process. A detailed analysis of La(2)O3 films of varying thicknesses showed that as film layering increased, the substrates became coated with an La silicate interfacial layer which prevents the formation of SiOx. Moreover, the La2O3 forms when film thickness reaches a certain value, leading to practical application of La2O3 in the manufacture of MOSFET transistors. (C) 2017 Elsevier B.V. All rights reserved.
KeywordLa2O3 High-k Structural X-ray techniques Interface
DOI10.1016/j.matlet.2016.12.137
WOS KeywordRAY PHOTOELECTRON-SPECTROSCOPY ; ATOMIC LAYER DEPOSITION
Indexed BySCI ; EI ; SCOPUS
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000394403000025
EI Accession Number20170203234582
EI KeywordsElectronic structure - Film growth - Lanthanum oxides - Silicates - Silicon - Substrates - X ray photoelectron spectroscopy
EI Classification Number549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 804 Chemical Products Generally - 951 Materials Science
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Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/285126
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Ablat, A,Mamat, M,Ghupur, Y,et al. Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy[J]. MATERIALS LETTERS,2017,191:97-100.
APA Ablat, A.,Mamat, M.,Ghupur, Y.,Aimidula, A.,Wu, R.,...&奎热西.(2017).Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy.MATERIALS LETTERS,191,97-100.
MLA Ablat, A,et al."Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy".MATERIALS LETTERS 191(2017):97-100.
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