| Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy | |
Ablat, A; Mamat, M; Ghupur, Y; Aimidula, A; Wu, R ; Baqi, MA; Gholam, T; Wang, JO; Qian, HJ; Wu, R; Ibrahim, K; Wang JO(王嘉鸥); Qian HJ(钱海杰); Wu R(吴蕊); Kui RX(奎热西)
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| 2017 | |
| Source Publication | MATERIALS LETTERS
 |
| ISSN | 0167-577X |
| EISSN | 1873-4979 |
| Volume | 191Pages:97-100 |
| Subtype | Article |
| Abstract | A study of the interface between La2O3 films and Si substrates was conducted with the aim to understand interfacial change during the film growth process. A detailed comparison of Si 2s, 2p, and O 1s photoelectron spectra of the La2O3/Si interface formed on clean silicon substrates indicates that a La-silicate phase forms rapidly at the interface during the film deposition process. A detailed analysis of La(2)O3 films of varying thicknesses showed that as film layering increased, the substrates became coated with an La silicate interfacial layer which prevents the formation of SiOx. Moreover, the La2O3 forms when film thickness reaches a certain value, leading to practical application of La2O3 in the manufacture of MOSFET transistors. (C) 2017 Elsevier B.V. All rights reserved. |
| Keyword | La2O3 High-k Structural X-ray techniques Interface |
| DOI | 10.1016/j.matlet.2016.12.137 |
| WOS Keyword | RAY PHOTOELECTRON-SPECTROSCOPY ; ATOMIC LAYER DEPOSITION |
| Indexed By | SCI ; EI ; SCOPUS |
| Language | 英语 |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000394403000025 |
| EI Accession Number | 20170203234582 |
| EI Keywords | Electronic structure - Film growth - Lanthanum oxides - Silicates - Silicon - Substrates - X ray photoelectron spectroscopy |
| EI Classification Number | 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 804 Chemical Products Generally - 951 Materials Science |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ihep.ac.cn/handle/311005/285126 |
| Collection | 多学科研究中心 |
| Affiliation | 中国科学院高能物理研究所 |
| First Author Affilication | Institute of High Energy |
| Recommended Citation GB/T 7714 | Ablat, A,Mamat, M,Ghupur, Y,et al. Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy[J]. MATERIALS LETTERS,2017,191:97-100. |
| APA | Ablat, A.,Mamat, M.,Ghupur, Y.,Aimidula, A.,Wu, R.,...&奎热西.(2017).Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy.MATERIALS LETTERS,191,97-100. |
| MLA | Ablat, A,et al."Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy".MATERIALS LETTERS 191(2017):97-100. |
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