Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process
Zhang Y(张颖); Zhu HB(朱宏博); Zhang, Y; Zhu, HB; Zhang, L; Fu, M
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
2016
卷号831页码:99-104
关键词CEPC vertex detector CPS TCAD simulation Charge collection Radiation damage
DOI10.1016/j.nima.2016.03.031
文章类型Article; Proceedings Paper
英文摘要The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (WC), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 mu m CMOS imaging sensor process and we will verify the simulation results with future measurements. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]HIGH-ENERGY-PHYSICS ; SILICON DETECTORS ; PARTICLE TRACKING ; SIMULATION ; PERFORMANCE ; BOSON ; LHC
语种英语
WOS记录号WOS:000382255800021
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260873
专题中国科学院高能物理研究所_实验物理中心_期刊论文
中国科学院高能物理研究所_实验物理中心
作者单位中国科学院高能物理研究所
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Zhang Y,Zhu HB,Zhang, Y,et al. Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,831:99-104.
APA 张颖,朱宏博,Zhang, Y,Zhu, HB,Zhang, L,&Fu, M.(2016).Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,831,99-104.
MLA 张颖,et al."Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 831(2016):99-104.
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