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Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade
Liang, Z; Affolder, A; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C; Caragiulo, P; Das, D; Dopke, J; Dragone, A; Ehrler, E; Fadeyev, V; Galloway, Z; Grabas, H; Gregor, IM; Grenier, P; Grillo, A; Hoeferkamp, M; Hommels, LBA; Huffman, BT; John, J; Kanisauskas, K; Kenney, C; Kramberger, J; Mandic, I; Maneuski, D; Martinez-Mckinney, E; McMahon, S; Meng, L; Mikuz, M; Muenstermann, D; Nickerson, R; Peric, I; Phillips, P; Plackett, R; Rubbo, E; Segal, J; Seidel, S; Seiden, A; Shipsey, I; Song, W; Stanitzki, M; Su, D; Tamma, C; Turchetta, R; Vigani, L; Volk, J; Wang, R; Warren, M; Wilson, E; Worm, S; Xiu, Q; Zhang, J; Zhu, H; Song WM(宋维民); Xiu QL(修青磊); Zhu HB(朱宏博)
2016
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
卷号831页码:156-160
文章类型Article; Proceedings Paper
摘要This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35 mu m high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60 Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25 ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip. (C) 2016 Elsevier B.V. All rights reserved.
关键词HVCMOS Silicon Strips ATLAS phase-II upgrade
DOI10.1016/j.nima.2016.05.007
语种英语
WOS记录号WOS:000382255800030
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260867
专题实验物理中心
作者单位中国科学院高能物理研究所
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Liang, Z,Affolder, A,Arndt, K,et al. Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,831:156-160.
APA Liang, Z.,Affolder, A.,Arndt, K.,Bates, R.,Benoit, M.,...&朱宏博.(2016).Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,831,156-160.
MLA Liang, Z,et al."Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 831(2016):156-160.
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