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Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade
Fadeyev, V; Galloway, Z; Grabas, H; Grillo, AA; Liang, Z; Martinez-Mckinney, F; Seiden, A; Volk, J; Affolder, A; Buckland, M; Meng, L; Arndt, K; Bortoletto, D; Huffman, T; John, J; McMahon, S; Nickerson, R; Phillips, P; Plackett, R; Shipsey, I; Vigani, L; Bates, R; Blue, A; Buttar, C; Kanisauskas, K; Maneuski, D; Benoit, M; Di Bello, F; Caragiulo, P; Dragone, A; Grenier, P; Kenney, C; Rubbo, F; Segal, J; Su, D; Tamma, C; Das, D; Dopke, J; Turchetta, R; Wilson, F; Worm, S; Ehrler, F; Peric, I; Gregor, IM; Stanitzki, M; Hoeferkamp, M; Seidel, S; Hommels, LBA; Kramberger, G; Mandic, I; Mikuz, M; Muenstermann, D; Wang, R; Zhang, J; Warren, M; Song, W; Xiu, Q; Zhu, H; Song WM(宋维民); Xiu QL(修青磊); Zhu HB(朱宏博)
2016
发表期刊NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
卷号831页码:189-196
文章类型Article; Proceedings Paper
摘要ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HRCMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation. (C) 2016 Elsevier B.V. All rights reserved.
关键词Silicon Sensor HV-CMOS HR-CMOS Tracker
DOI10.1016/j.nima.2016.05.092
语种英语
WOS记录号WOS:000382255800035
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260863
专题实验物理中心
作者单位中国科学院高能物理研究所
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Fadeyev, V,Galloway, Z,Grabas, H,et al. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,831:189-196.
APA Fadeyev, V.,Galloway, Z.,Grabas, H.,Grillo, AA.,Liang, Z.,...&朱宏博.(2016).Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,831,189-196.
MLA Fadeyev, V,et al."Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 831(2016):189-196.
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