Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade
Fadeyev, V; Galloway, Z; Grabas, H; Grillo, AA; Liang, Z; Martinez-Mckinney, F; Seiden, A; Volk, J; Affolder, A; Buckland, M; Meng, L; Arndt, K; Bortoletto, D; Huffman, T; John, J; McMahon, S; Nickerson, R; Phillips, P; Plackett, R; Shipsey, I; Vigani, L; Bates, R; Blue, A; Buttar, C; Kanisauskas, K; Maneuski, D; Benoit, M; Di Bello, F; Caragiulo, P; Dragone, A; Grenier, P; Kenney, C; Rubbo, F; Segal, J; Su, D; Tamma, C; Das, D; Dopke, J; Turchetta, R; Wilson, F; Worm, S; Ehrler, F; Peric, I; Gregor, IM; Stanitzki, M; Hoeferkamp, M; Seidel, S; Hommels, LBA; Kramberger, G; Mandic, I; Mikuz, M; Muenstermann, D; Wang, R; Zhang, J; Warren, M; Song, W; Xiu, Q; Zhu, H; Song WM(宋维民); Xiu QL(修青磊); Zhu HB(朱宏博)
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
2016
卷号831页码:189-196
关键词Silicon Sensor HV-CMOS HR-CMOS Tracker
DOI10.1016/j.nima.2016.05.092
文章类型Article; Proceedings Paper
英文摘要ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HRCMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation. (C) 2016 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000382255800035
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260863
专题中国科学院高能物理研究所_实验物理中心_期刊论文
中国科学院高能物理研究所_实验物理中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Fadeyev, V,Galloway, Z,Grabas, H,et al. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,831:189-196.
APA Fadeyev, V.,Galloway, Z.,Grabas, H.,Grillo, AA.,Liang, Z.,...&朱宏博.(2016).Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,831,189-196.
MLA Fadeyev, V,et al."Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 831(2016):189-196.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
20160738.pdf(2603KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Fadeyev, V]的文章
[Galloway, Z]的文章
[Grabas, H]的文章
百度学术
百度学术中相似的文章
[Fadeyev, V]的文章
[Galloway, Z]的文章
[Grabas, H]的文章
必应学术
必应学术中相似的文章
[Fadeyev, V]的文章
[Galloway, Z]的文章
[Grabas, H]的文章
相关权益政策
暂无数据
收藏/分享
文件名: 20160738.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。