IHEP OpenIR  > 多学科研究中心
Structural characteristic correlated to the electronic band gap in MoS2
Chu SQ(储胜启); Chu, SQ; Park, C; Shen, GY
2016
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
EISSN2469-9969
Volume94Issue:2Pages:20101
Corresponding Author储胜启
SubtypeArticle
AbstractThe structural evolution with pressure in bulk MoS2 has been investigated by high-pressure x-ray diffraction using synchrotron radiation. We found that the out-of-plane S-Mo-S bond angle theta increases and that in in-plane angle phi decreases linearly with increasing pressure across the known semiconducting-to-metal phase transition, whereas the Mo-S bond length and the S-Mo-S trilayer thickness display only little change. Extrapolating the experimental result along the in-plane lattice parameter with pressure, both S-Mo-S bond angles trend to those found in monolayer MoS2, which manifests as a structural characteristic closely correlating the electronic band gap of MoS2 to its physical forms and phases, e.g., monolayer as direct band gap semiconductor, multilayer or bulk as indirect band gap semiconductor, and high-pressure (> 19 GPa) bulk form as metal. Combined with the effects of bond strength and van der Waals interlayer interactions, the structural correlations between the characteristic bond angle and electronic band gaps are readily extendible to other transition metal dichalcogenide systems (MX2, where M = Mo, W and X = S, Se, Te).
DOI10.1103/PhysRevB.94.020101
WOS KeywordFEW-LAYER MOS2 ; MONOLAYER MOS2 ; MOLYBDENUM-DISULFIDE ; SURFACE-STRUCTURE ; PRESSURE ; STRAIN ; WSE2 ; PHOTOLUMINESCENCE ; TRANSITION ; SCATTERING
Indexed BySCI ; ADS
Language英语
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000379649800001
ADS Bibcode2016PhRvB..94b0101C
ADS URLhttps://ui.adsabs.harvard.edu/abs/2016PhRvB..94b0101C
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2016PhRvB..94b0101C/citations
Citation statistics
Cited Times:4 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/260432
Collection多学科研究中心
Affiliation中国科学院高能物理研究所
Recommended Citation
GB/T 7714
Chu SQ,Chu, SQ,Park, C,et al. Structural characteristic correlated to the electronic band gap in MoS2[J]. PHYSICAL REVIEW B,2016,94(2):20101.
APA 储胜启,Chu, SQ,Park, C,&Shen, GY.(2016).Structural characteristic correlated to the electronic band gap in MoS2.PHYSICAL REVIEW B,94(2),20101.
MLA 储胜启,et al."Structural characteristic correlated to the electronic band gap in MoS2".PHYSICAL REVIEW B 94.2(2016):20101.
Files in This Item:
File Name/Size DocType Version Access License
20160510.pdf(1515KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[储胜启]'s Articles
[Chu, SQ]'s Articles
[Park, C]'s Articles
Baidu academic
Similar articles in Baidu academic
[储胜启]'s Articles
[Chu, SQ]'s Articles
[Park, C]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[储胜启]'s Articles
[Chu, SQ]'s Articles
[Park, C]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.