Structural characteristic correlated to the electronic band gap in MoS2
Chu SQ(储胜启); Chu, SQ; Park, C; Shen, GY
刊名PHYSICAL REVIEW B
2016
卷号94期号:2
DOI10.1103/PhysRevB.94.020101
通讯作者储胜启
文章类型期刊论文
英文摘要The structural evolution with pressure in bulk MoS2 has been investigated by high-pressure x-ray diffraction using synchrotron radiation. We found that the out-of-plane S-Mo-S bond angle theta increases and that in in-plane angle phi decreases linearly with increasing pressure across the known semiconducting-to-metal phase transition, whereas the Mo-S bond length and the S-Mo-S trilayer thickness display only little change. Extrapolating the experimental result along the in-plane lattice parameter with pressure, both S-Mo-S bond angles trend to those found in monolayer MoS2, which manifests as a structural characteristic closely correlating the electronic band gap of MoS2 to its physical forms and phases, e.g., monolayer as direct band gap semiconductor, multilayer or bulk as indirect band gap semiconductor, and high-pressure (> 19 GPa) bulk form as metal. Combined with the effects of bond strength and van der Waals interlayer interactions, the structural correlations between the characteristic bond angle and electronic band gaps are readily extendible to other transition metal dichalcogenide systems (MX2, where M = Mo, W and X = S, Se, Te).
类目[WOS]Physics, Condensed Matter
关键词[WOS]FEW-LAYER MOS2 ; MONOLAYER MOS2 ; MOLYBDENUM-DISULFIDE ; SURFACE-STRUCTURE ; PRESSURE ; STRAIN ; WSE2 ; PHOTOLUMINESCENCE ; TRANSITION ; SCATTERING
语种英语
WOS记录号WOS:000379649800001
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260432
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_粒子天体物理中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Chu SQ,Chu, SQ,Park, C,et al. Structural characteristic correlated to the electronic band gap in MoS2[J]. PHYSICAL REVIEW B,2016,94(2).
APA 储胜启,Chu, SQ,Park, C,&Shen, GY.(2016).Structural characteristic correlated to the electronic band gap in MoS2.PHYSICAL REVIEW B,94(2).
MLA 储胜启,et al."Structural characteristic correlated to the electronic band gap in MoS2".PHYSICAL REVIEW B 94.2(2016).
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