Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films
Wang, YQ; Wu, X; Ge, YF; Wang, YL; Guo, HM; Shao, Y; Lei, T; Liu, C; Wang, JO; Zhu, SY; Liu, ZL; Guo, W; Ibrahim, K; Yao, YG; Gao, HJ; Lei T(雷涛); Liu C(刘晨); Wang JO(王嘉鸥); Kui RX(奎热西)
刊名ADVANCED ELECTRONIC MATERIALS
2016
卷号2期号:12
DOI10.1002/aelm.201600324
文章类型期刊论文
英文摘要2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain-induced wrinkles in an anisotropic 2D transition-metal-trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle-based heterojunctions for novel nanoelectronic devices.
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
关键词[WOS]RAMAN-SPECTROSCOPY ; GRAPHENE ; STRAIN ; SEMICONDUCTOR
语种英语
WOS记录号WOS:000392939300011
引用统计
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260403
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Wang, YQ,Wu, X,Ge, YF,et al. Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films[J]. ADVANCED ELECTRONIC MATERIALS,2016,2(12).
APA Wang, YQ.,Wu, X.,Ge, YF.,Wang, YL.,Guo, HM.,...&奎热西.(2016).Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films.ADVANCED ELECTRONIC MATERIALS,2(12).
MLA Wang, YQ,et al."Tunable Electronic Structures in Wrinkled 2D Transition-Metal-Trichalcogenide (TMT) HfTe3 Films".ADVANCED ELECTRONIC MATERIALS 2.12(2016).
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