|Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon|
|Wang, Z; Yang, L; Zhang, LZ; Shi, SB; Zhang, P; Cao, XZ; Wang, BY; Zhang P(张鹏); Cao XZ(曹兴忠); Wang BY(王宝义)
|发表期刊||JOURNAL OF ELECTRONIC MATERIALS
|摘要||Cz n-type Si (100) wafers are implanted with 190 keV O and 40 keV H ions in different implantation sequences. Cross sectional transmission electron microscopy and slow positron annihilation spectroscopy are used to study the formation and evolution of micro-defects. Our results clearly show that the defect morphology depends strongly on the implantation sequence. Large cavities are observed in O preimplanted samples, while only platelets are observed in H preimplanted samples. The change regularity of the S parameter is the same for the Si samples co-implanted at different sequences. But in H preimplanted samples, the S parameter is a little higher. The effects of the implantation sequence on the micro-defects have been discussed in combination with H and O implantation-induced defects as well as their interactions upon annealing.|
|WOS类目||Engineering, Electrical & Electronic
; Materials Science, Multidisciplinary
; Physics, Applied
Wang, Z,Yang, L,Zhang, LZ,et al. Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(10):5064-5068.
Wang, Z.,Yang, L.,Zhang, LZ.,Shi, SB.,Zhang, P.,...&王宝义.(2016).Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon.JOURNAL OF ELECTRONIC MATERIALS,45(10),5064-5068.
Wang, Z,et al."Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon".JOURNAL OF ELECTRONIC MATERIALS 45.10(2016):5064-5068.