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Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon
Wang, Z; Yang, L; Zhang, LZ; Shi, SB; Zhang, P; Cao, XZ; Wang, BY; Zhang P(张鹏); Cao XZ(曹兴忠); Wang BY(王宝义)
2016
发表期刊JOURNAL OF ELECTRONIC MATERIALS
卷号45期号:10页码:5064-5068
摘要Cz n-type Si (100) wafers are implanted with 190 keV O and 40 keV H ions in different implantation sequences. Cross sectional transmission electron microscopy and slow positron annihilation spectroscopy are used to study the formation and evolution of micro-defects. Our results clearly show that the defect morphology depends strongly on the implantation sequence. Large cavities are observed in O preimplanted samples, while only platelets are observed in H preimplanted samples. The change regularity of the S parameter is the same for the Si samples co-implanted at different sequences. But in H preimplanted samples, the S parameter is a little higher. The effects of the implantation sequence on the micro-defects have been discussed in combination with H and O implantation-induced defects as well as their interactions upon annealing.
文章类型期刊论文
关键词Platelet cavity H implantation silicon
DOI10.1007/s11664-016-4698-8
关键词[WOS]LAYER TRANSFER ; ION-CUT ; HYDROGEN ; SI ; COIMPLANTATION ; TEMPERATURE ; MECHANISM ; OXYGEN ; RANGE
语种英语
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000382585400048
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/260315
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Wang, Z,Yang, L,Zhang, LZ,et al. Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(10):5064-5068.
APA Wang, Z.,Yang, L.,Zhang, LZ.,Shi, SB.,Zhang, P.,...&王宝义.(2016).Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon.JOURNAL OF ELECTRONIC MATERIALS,45(10),5064-5068.
MLA Wang, Z,et al."Effects of Implantation Sequence on the Micro-defects in H and O Implanted Silicon".JOURNAL OF ELECTRONIC MATERIALS 45.10(2016):5064-5068.
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