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Role of vacancy-type defects in magnetism of GaMnN
Xing HY(邢海英); Chen Y(陈雨); Yuan MY(苑梦尧); Guo ZY(郭志英); Li K(李琨); Cui MQ(崔明启); Xing, HY; Chen, Y; Ji, C; Jiang, SX; Yuan, MY; Guo, ZY; Li, K; Cui, MQ; Zhang, GY
Source PublicationCHINESE PHYSICS B
AbstractRole of vacancy-type (N vacancy (V-N) and Ga vacancy (V-Ga)) defects in magnetism of GaMnN is investigated by first-principle calculation. Theoretical results show that both the V-N and V-Ga influence the ferromagnetic state of a system. The V-N can induce antiferromagnetic state and the V-Ga indirectly modify the stability of the ferromagnetic state by depopulating the Mn levels in GaMnN. The transfer of electrons between the vacancy defects and Mn ions results in converting Mn3+ (d(4)) into Mn2+ (d(5)). The introduced V-N and the ferromagnetism become stronger and then gradually weaker with Mn concentration increasing, as well as the coexistence of Mn3+ (d(4)) and Mn2+ (d(5)) are found in GaMnN films grown by metal-organic chemical vapor deposition. The analysis suggests that a big proportion of Mn3+ changing into Mn2+ will reduce the exchange interaction and magnetic correlation of Mn atoms and lead to the reduction of ferromagnetism of material.
KeywordGaMnN vacancy defect ferromagnetism first-principles calculation MOCVD
Indexed BySCI ; ADS
WOS IDWOS:000377876400072
ADS Bibcode2016ChPhB..25f7503H
ADS URLhttps://ui.adsabs.harvard.edu/abs/2016ChPhB..25f7503H
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2016ChPhB..25f7503H/citations
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Cited Times:2 [ADS]
Document Type期刊论文
Recommended Citation
GB/T 7714
Xing HY,Chen Y,Yuan MY,et al. Role of vacancy-type defects in magnetism of GaMnN[J]. CHINESE PHYSICS B,2016,25(6):67503.
APA 邢海英.,陈雨.,苑梦尧.,郭志英.,李琨.,...&Zhang, GY.(2016).Role of vacancy-type defects in magnetism of GaMnN.CHINESE PHYSICS B,25(6),67503.
MLA 邢海英,et al."Role of vacancy-type defects in magnetism of GaMnN".CHINESE PHYSICS B 25.6(2016):67503.
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