Study of silicon pixel sensor for synchrotron radiation detection | |
Li ZJ(李贞杰)![]() ![]() ![]() | |
2016 | |
发表期刊 | CHINESE PHYSICS C (IF:5.084[JCR-2016],2.808[5-Year]) |
ISSN | 1674-1137 |
EISSN | 2058-6132 |
卷号 | 40期号:3页码:36001 |
文章类型 | Article |
摘要 | The silicon pixel sensor (SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection (SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 mu m thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process, excellent SPS characteristics with dark current of 2 nA/cm(2), full depletion voltage < 50 V and breakdown voltage > 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high (< 20% for X-ray photon energy > 10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source. |
关键词 | synchrotron X-ray silicon pixel sensor dark current energy resolution count rate |
DOI | 10.1088/1674-1137/40/3/036001 |
收录类别 | SCI ; ADS |
语种 | 英语 |
WOS记录号 | WOS:000372390600013 |
ADS Bibcode | 2016ChPhC..40c6001L |
ADS URL | https://ui.adsabs.harvard.edu/abs/2016ChPhC..40c6001L |
ADS引文 | https://ui.adsabs.harvard.edu/abs/2016ChPhC..40c6001L/citations |
INSPIRE ID | 1359824 |
引用统计 | 正在获取...
被引频次:0 [INSPIRE]
被引频次:5 [ADS]
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文献类型 | 期刊论文 |
条目标识符 | https://ir.ihep.ac.cn/handle/311005/247946 |
专题 | 多学科研究中心 |
推荐引用方式 GB/T 7714 | Li ZJ,Li, ZJ,Hu LF,et al. Study of silicon pixel sensor for synchrotron radiation detection[J]. CHINESE PHYSICS C,2016,40(3):36001. |
APA | 李贞杰.,Li, ZJ.,胡凌飞.,刘鹏.,Jia, YC.,...&Yin, HX.(2016).Study of silicon pixel sensor for synchrotron radiation detection.CHINESE PHYSICS C,40(3),36001. |
MLA | 李贞杰,et al."Study of silicon pixel sensor for synchrotron radiation detection".CHINESE PHYSICS C 40.3(2016):36001. |
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