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Study of silicon pixel sensor for synchrotron radiation detection
Li ZJ(李贞杰); Li, ZJ; Hu LF(胡凌飞); 刘鹏(多); Jia, YC; Hu, LF; Liu, P; Yin, HX
2016
发表期刊CHINESE PHYSICS C (IF:5.084[JCR-2016],2.808[5-Year])
ISSN1674-1137
EISSN2058-6132
卷号40期号:3页码:36001
文章类型Article
摘要The silicon pixel sensor (SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection (SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 mu m thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process, excellent SPS characteristics with dark current of 2 nA/cm(2), full depletion voltage < 50 V and breakdown voltage > 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high (< 20% for X-ray photon energy > 10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.
关键词synchrotron X-ray silicon pixel sensor dark current energy resolution count rate
DOI10.1088/1674-1137/40/3/036001
收录类别SCI ; ADS
语种英语
WOS记录号WOS:000372390600013
ADS Bibcode2016ChPhC..40c6001L
ADS URLhttps://ui.adsabs.harvard.edu/abs/2016ChPhC..40c6001L
ADS引文https://ui.adsabs.harvard.edu/abs/2016ChPhC..40c6001L/citations
INSPIRE ID1359824
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被引频次:0 [INSPIRE]
被引频次:5 [ADS]
文献类型期刊论文
条目标识符https://ir.ihep.ac.cn/handle/311005/247946
专题多学科研究中心
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GB/T 7714
Li ZJ,Li, ZJ,Hu LF,et al. Study of silicon pixel sensor for synchrotron radiation detection[J]. CHINESE PHYSICS C,2016,40(3):36001.
APA 李贞杰.,Li, ZJ.,胡凌飞.,刘鹏.,Jia, YC.,...&Yin, HX.(2016).Study of silicon pixel sensor for synchrotron radiation detection.CHINESE PHYSICS C,40(3),36001.
MLA 李贞杰,et al."Study of silicon pixel sensor for synchrotron radiation detection".CHINESE PHYSICS C 40.3(2016):36001.
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