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Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films
Cong, GW; Peng, WQ; Wei, HY; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG; Lu, JG; Ye, ZZ; Zhu, LP; Qian, HJ; Su, R; Hong, CH; Zhong, J; Ibrahim, K; Hu, TD; Qian HJ(钱海杰); Su R(苏润); Hong CH(洪才浩); Zhong J(钟俊); Kui RX(奎热西); Hu TD(胡天斗)
2006
发表期刊APPLIED PHYSICS LETTERS
卷号88期号:6页码:602110
通讯作者Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
文章类型Article
摘要The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics.
学科领域Physics
研究领域[WOS]Physics ; Physics
DOI10.1063/1.2171804
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Applied
WOS记录号WOS:000235252800055
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/241070
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Cong, GW,Peng, WQ,Wei, HY,et al. Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films[J]. APPLIED PHYSICS LETTERS,2006,88(6):602110.
APA Cong, GW.,Peng, WQ.,Wei, HY.,Han, XX.,Wu, JJ.,...&胡天斗.(2006).Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films.APPLIED PHYSICS LETTERS,88(6),602110.
MLA Cong, GW,et al."Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films".APPLIED PHYSICS LETTERS 88.6(2006):602110.
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