Nanopillars by cesium chloride self-assembly and dry etching

doi:10.1088/0957-4484/21/46/465302

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	Nanopillars by cesium chloride self-assembly and dry etching
	Liao YX(廖元勋); Yi FT(伊福廷); Liao, YX; Yi, FT
	2010
发表期刊	NANOTECHNOLOGY (IF:3.44[JCR-2016],3.578[5-Year])
卷号	21 期号:46 页码:465302
通讯作者	[Liao, Y-X ; Yi, F-T] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
文章类型	Article
摘要	We introduce a method combining cesium chloride self-assembly and inductively coupled plasma to fabricate nanopillars with uniform coverage over an entire 4 inch prepatterned silicon wafer. This method can produce pillars with average diameters ranging from 50 nm to 1.5 mu m, aspect ratios up to 13 and coverage ratios above 35%. Cesium chloride self-assembly utilizes the deliquescence of salt, with advantages of excellent tunability, high aspect ratio and potential for micro/nano mixed structures, which makes this technology promising in the areas of MEMS, solar cells, batteries, light emitting diodes, etc.
学科领域	Science & Technology - Other Topics; Materials Science; Physics
DOI	10.1088/0957-4484/21/46/465302
URL	查看原文
收录类别	SCI ; ADS
语种	英语
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000283491000006
ADS Bibcode	2010Nanot..21T5302L
ADS URL	https://ui.adsabs.harvard.edu/abs/2010Nanot..21T5302L
ADS引文	https://ui.adsabs.harvard.edu/abs/2010Nanot..21T5302L/citations
引用统计	正在获取... 被引频次：14 [ADS]
文献类型	期刊论文
条目标识符	https://ir.ihep.ac.cn/handle/311005/241067
专题	多学科研究中心
作者单位	中国科学院高能物理研究所
第一作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Liao YX,Yi FT,Liao, YX,et al. Nanopillars by cesium chloride self-assembly and dry etching[J]. NANOTECHNOLOGY,2010,21(46):465302.
APA	廖元勋,伊福廷,Liao, YX,&Yi, FT.(2010).Nanopillars by cesium chloride self-assembly and dry etching.NANOTECHNOLOGY,21(46),465302.
MLA	廖元勋,et al."Nanopillars by cesium chloride self-assembly and dry etching".NANOTECHNOLOGY 21.46(2010):465302.