Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films
Zhao, DG; Jiang, DS; Yang, H; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Hao, XP; Wei, L; Li, X; Li, XY; Gong, HM; Hao XP(郝小鹏); Wei L(魏龙)
刊名APPLIED PHYSICS LETTERS
2006
卷号88期号:25页码:252101
学科分类Physics
DOI10.1063/1.2213932
通讯作者Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
文章类型Article
英文摘要We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000238487800035
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/241052
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Zhao, DG,Jiang, DS,Yang, H,et al. Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films[J]. APPLIED PHYSICS LETTERS,2006,88(25):252101.
APA Zhao, DG.,Jiang, DS.,Yang, H.,Zhu, JJ.,Liu, ZS.,...&魏龙.(2006).Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films.APPLIED PHYSICS LETTERS,88(25),252101.
MLA Zhao, DG,et al."Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films".APPLIED PHYSICS LETTERS 88.25(2006):252101.
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