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O 2p hole-assisted electronic processes in the Pr1-xSrxMnO3 (x=0.0, 0.3) system
Kui RX(奎热西); Qian HJ(钱海杰); Wu X(巫翔); Abbas, MI; Wang JO(王嘉鸥); Hong CH(洪才浩); Su R(苏润); Zhong J(钟俊); Dong YH(董宇辉); Wu ZY(吴自玉); Wei L(魏龙); Xian DC(冼鼎昌); Ibrahim, K; Qian, HJ; Wu, X; Abbas, MI; Wang, JO; Hong, CH; Su, R; Zhong, J; Dong, YH; Wu, ZY; Wei, L; Xian, DC; Li, YX; Lapeyre, GJ; Mannella, N; Fadley, CS; Baba, Y
Source PublicationPHYSICAL REVIEW B
Corresponding AuthorChinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Hebei Univ Technol, Ctr Magnet Mat & Magnet Technol, Tianjin 300130, Peoples R China ; Montana State Univ, Dept Phys, Bozeman, MT 59717 USA ; Univ Calif Davis, Dept Phys, Davis, CA 95616 USA ; Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA ; Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, Tokai, Ibaraki 3191195, Japan
AbstractExperimental results, by x-ray absorption (XAS) at the oxygen K-edge and photon-energy dependence of the O 1s2p2p Auger line at the O K threshold, below Mn L-2,L-3 as well as well above the Mn L-2,L-3 edge of colossal magnetoresistance (CMR) manganites Pr1-xSrxMnO3 (PSMO) with x=0.0 and x=0.3 compositions, demonstrate the existence of an oxygen 2p hole state and show its importance in the electronic processes. Both XAS and Auger spectra self-consistently manifest that the oxygen 2p holes density of state (DOS) increases with hole doping in the PSMO system, hinting at a hole state transfer from e(g) symmetry orbitals of Mn 3d valence bands to oxygen 2p with a Mn4+ ion increase through Sr2+ doping. These are discussed in terms of the possible interatomic hybridization of Mn 3d with O 2p orbitals and a different O 2p valence band DOS for different PSMO compositions in the frame of a covalent picture.
Subject AreaPhysics
Indexed ByADS
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000226111800076
ADS Bibcode2004PhRvB..70v4433I
ADS URLhttps://ui.adsabs.harvard.edu/abs/2004PhRvB..70v4433I
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2004PhRvB..70v4433I/citations
Citation statistics
Cited Times:18 [ADS]
Document Type期刊论文
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Kui RX,Qian HJ,Wu X,et al. O 2p hole-assisted electronic processes in the Pr1-xSrxMnO3 (x=0.0, 0.3) system[J]. PHYSICAL REVIEW B,2004,70(22):224433.
APA 奎热西.,钱海杰.,巫翔.,Abbas, MI.,王嘉鸥.,...&Baba, Y.(2004).O 2p hole-assisted electronic processes in the Pr1-xSrxMnO3 (x=0.0, 0.3) system.PHYSICAL REVIEW B,70(22),224433.
MLA 奎热西,et al."O 2p hole-assisted electronic processes in the Pr1-xSrxMnO3 (x=0.0, 0.3) system".PHYSICAL REVIEW B 70.22(2004):224433.
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