; Zhang, Yue] Beijing Univ Sci & Technol, State Key Lab Adv Metal & Mat, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
; [Zhang, Xiaomei
; Wang, Zhong Lin
; Mai, Wenjie
; Gu, Yudong] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
; [Chu, Wangsheng
; Wu, Ziyu] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China
Mn doped ZnO nanowires (NWs) were fabricated by a one-step vapor-solid process at 500 degrees C. The doped Mn exists in the wurtzite lattice as substitutional atom without forming secondary phases. X-ray absorption near-edge structure reveals that the doped Mn atoms occupy the Zn sites, and they lead to an expansion in lattice constants. The I-V characteristic of a single Zn1-xMnxO NW shows a typical Ohmic contact with gold electrodes. The as-received NWs could be suitable for studying spintronics in one-dimensional diluted magnetic semiconductors. (C) 2008 American Institute of Physics.