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Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
Yang, XL; Zhu, WX; Wang, CD; Fang, H; Yu, TJ; Yang, ZJ; Zhang, GY; Qin, XB; Yu, RS; Wang, BY; Qin XB(秦秀波); Yu RS(于润升); Wang BY(王宝义)
2009
发表期刊APPLIED PHYSICS LETTERS
卷号94期号:15页码:151907
通讯作者[Yang, X. L. ; Zhu, W. X. ; Wang, C. D. ; Fang, H. ; Yu, T. J. ; Yang, Z. J. ; Zhang, G. Y.] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; [Qin, X. B. ; Yu, R. S. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
摘要The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as V(N)-Mn(Ga) complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.
文章类型Article
关键词doping profiles Doppler broadening ferromagnetic materials gallium compounds III-V semiconductors magnetic thin films manganese compounds MOCVD positron annihilation semiconductor doping semiconductor thin films semimagnetic semiconductors vacancies (crystal) wide band gap semiconductors
学科领域Physics
研究领域[WOS]Physics
DOI10.1063/1.3120267
URL查看原文
语种英语
WOS类目Physics, Applied
WOS记录号WOS:000265285200024
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被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/241007
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Yang, XL,Zhu, WX,Wang, CD,et al. Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects[J]. APPLIED PHYSICS LETTERS,2009,94(15):151907.
APA Yang, XL.,Zhu, WX.,Wang, CD.,Fang, H.,Yu, TJ.,...&王宝义.(2009).Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects.APPLIED PHYSICS LETTERS,94(15),151907.
MLA Yang, XL,et al."Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects".APPLIED PHYSICS LETTERS 94.15(2009):151907.
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