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The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition
Song, J; Xu, FJ; Miao, ZL; Huang, S; Wang, Y; Wang, XQ; Shen, B; Qin, XB; Wang, BY; Shen, XQ; Okumura, H; Qin XB(秦秀波); Wang BY(王宝义)
2010
发表期刊JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷号43期号:14页码:145402
通讯作者[Song, J. ; Xu, F. J. ; Miao, Z. L. ; Huang, S. ; Wang, Y. ; Wang, X. Q. ; Shen, B.] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China ; [Qin, X. B. ; Wang, B. Y.] Chinese Acad Sci, Key Lab Nucl Anal Tech, Inst High Energy Phys, Beijing 100049, Peoples R China ; [Shen, X. Q. ; Okumura, H.] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
摘要The electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition adopting the indium-surfactant method have been investigated by means of Hall measurement, photoluminescence and monoenergetic positron annihilation spectroscopy. The background electron concentration in GaN exhibits a minimum of 5.21 x 10(16) cm(-3) for a trimethylindium (TMIn) flow of 20 mu mol min(-1). The decrease in electron concentration with increasing TMIn flow is likely related to an increase in the density of complex defects involving Ga vacancy (V(Ga)), compensating the electrons. We speculate that the increase in electron concentration at high TMIn flow is caused by the formation of N vacancies (V(N)), acting as shallow donors. Competition between the two mechanisms may determine the variation of electron concentration with increasing TMIn flow. A downward trend in electron mobility with increasing TMIn flow is also observed, which likely results from an increase in concentration of complex defects involving V(Ga) and V(N).
文章类型Article
学科领域Physics
DOI10.1088/0022-3727/43/14/145402
研究领域[WOS]Physics
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语种英语
WOS类目Physics, Applied
WOS记录号WOS:000275891300015
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/241005
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Song, J,Xu, FJ,Miao, ZL,et al. The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2010,43(14):145402.
APA Song, J.,Xu, FJ.,Miao, ZL.,Huang, S.,Wang, Y.,...&王宝义.(2010).The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition.JOURNAL OF PHYSICS D-APPLIED PHYSICS,43(14),145402.
MLA Song, J,et al."The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition".JOURNAL OF PHYSICS D-APPLIED PHYSICS 43.14(2010):145402.
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