Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate
Yin, ZG; Chen, NF; Li, Y; Zhang, XW; Bai, YM; Chai, CL; Xie, YN; Zhang, J; Xie YN(谢亚宁); Zhang J(张静)
刊名APPLIED PHYSICS LETTERS
2008
卷号93期号:14页码:142109
学科分类Physics
DOI10.1063/1.2989128
通讯作者[Yin, Z. G. ; Chen, N. F. ; Zhang, X. W. ; Bai, Y. M. ; Chai, C. L.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; [Li, Y.] Univ Puerto Rico, Dept Engn Sci & Mat, Mayaguez, PR 00681 USA ; [Xie, Y. N. ; Zhang, J.] Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R China
文章类型Article
英文摘要We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989128]
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000259965400026
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/241000
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
中国科学院高能物理研究所_实验物理中心
中国科学院高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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Yin, ZG,Chen, NF,Li, Y,et al. Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate[J]. APPLIED PHYSICS LETTERS,2008,93(14):142109.
APA Yin, ZG.,Chen, NF.,Li, Y.,Zhang, XW.,Bai, YM.,...&张静.(2008).Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate.APPLIED PHYSICS LETTERS,93(14),142109.
MLA Yin, ZG,et al."Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate".APPLIED PHYSICS LETTERS 93.14(2008):142109.
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