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Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
Yi, JB; Lim, CC; Xing, GZ; Fan, HM; Van, LH; Huang, SL; Yang, KS; Huang, XL; Qin, XB; Wang, BY; Wu, T; Wang, L; Zhang, HT; Gao, XY; Liu, T; Wee, ATS; Feng, YP; Ding, J; Qin XB(秦秀波); Wang BY(王宝义)
2010
发表期刊PHYSICAL REVIEW LETTERS
卷号104期号:13页码:137201
通讯作者[Yi, J. B. ; Fan, H. M. ; Huang, X. L. ; Zhang, H. T. ; Ding, J.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore ; [Lim, C. C. ; Yang, K. S. ; Gao, X. Y. ; Liu, T. ; Wee, A. T. S. ; Feng, Y. P.] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore ; [Xing, G. Z. ; Huang, S. L. ; Wu, T. ; Wang, L.] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore ; [Van, L. H.] Natl Univ Singapore, Nanosci & Nanotechnol Initiat, Singapore 119260, Singapore ; [Yang, K. S.] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China ; [Qin, X. B. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
文章类型Article
摘要We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO: Li films with certain doping concentration and oxygen partial pressure.
学科领域Physics
研究领域[WOS]Physics ; Physics
DOI10.1103/PhysRevLett.104.137201
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000276260800041
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文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240999
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Yi, JB,Lim, CC,Xing, GZ,et al. Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO[J]. PHYSICAL REVIEW LETTERS,2010,104(13):137201.
APA Yi, JB.,Lim, CC.,Xing, GZ.,Fan, HM.,Van, LH.,...&王宝义.(2010).Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO.PHYSICAL REVIEW LETTERS,104(13),137201.
MLA Yi, JB,et al."Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO".PHYSICAL REVIEW LETTERS 104.13(2010):137201.
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