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Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD
Yang, XL; Chen, ZT; Wang, CD; Huang, S; Fang, H; Zhang, GY; Chen, DL; Yan, WS; Chen DL(陈栋梁)
2008
发表期刊JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷号41期号:12页码:125002
通讯作者[Yang X L ; Chen Z T ; Wang C D ; Huang S ; Fang H ; Zhang G Y] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China ; [Chen D L] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China ; [Yan W S] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
摘要We have investigated the effects of nitrogen vacancies (V(N)) induced by Mn doping on the electronic structure and transport properties of (Ga,Mn)N films grown by metal organic chemical vapour deposition (MOCVD). The significant increase in n-type carrier concentration in the (Ga,Mn)N film is attributed to the additional VN induced by Mn doping. Temperature-dependent Hall data indicate that the additional VN is the dominant scattering mechanism in the (Ga,Mn)N film in higher temperature regions. The Mn L(2,3) x-ray absorption spectra of the (Ga,Mn)N film shows a multiplet structure, indicating that the Mn ions are present mainly in the Mn(2+)(d(5)) states. These can be attributed to the electrons transferring from VN, which is well consistent with the electrical properties. An energy level model involving the charge transfer is proposed to explain the observed electronic structure and transport properties in the system.
文章类型Article
学科领域Physics
DOI10.1088/0022-3727/41/12/125002
研究领域[WOS]Physics
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语种英语
WOS类目Physics, Applied
WOS记录号WOS:000256568000007
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被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240992
专题多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Yang, XL,Chen, ZT,Wang, CD,et al. Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008,41(12):125002.
APA Yang, XL.,Chen, ZT.,Wang, CD.,Huang, S.,Fang, H.,...&陈栋梁.(2008).Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD.JOURNAL OF PHYSICS D-APPLIED PHYSICS,41(12),125002.
MLA Yang, XL,et al."Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD".JOURNAL OF PHYSICS D-APPLIED PHYSICS 41.12(2008):125002.
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