Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy
Wei, SQ; Yan, WS; Sun, ZH; Liu, QH; Zhong, WJ; Zhang, XY; Oyanagi, H; Wu, ZY; Wu ZY(吴自玉)
刊名APPLIED PHYSICS LETTERS
2006
卷号89期号:12页码:121901
学科分类Physics
DOI10.1063/1.2354442
通讯作者Univ Sci & Technol China, Natl Synchroton Radiat Lab, Hefei 230029, Peoples R China ; Fudan Univ, Dept Phys, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China ; Fudan Univ, Synchroton Radiat Res Ctr, Shanghai 200433, Peoples R China ; Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchroton Radiat Facil, Beijing 100039, Peoples R China
文章类型Article
英文摘要X-ray absorption near-edge structure (XANES) spectroscopy is used to study the features of occupation sites of Mn dopants in the Ga1-xMnxN dilute magnetic semiconductors (DMSs) with zinc-blende structure. Theoretical XANES spectra are calculated for representative structure models of Mn atoms in the GaN lattice. It is shown that the substitutional Mn in GaN is characterized by a preedge peak at 2.0 eV and a postedge multiple-scattering peak at 29.1 eV. The peaks shift in position and drop in intensity dramatically for the interstitial Mn-I and Mn-Ga-Mn-I dimer, and then disappear completely for Mn clusters. The experimental spectrum of Ga0.990Mn0.010N is almost reproduced by the calculated XANES spectrum of GaMnN with substitutional Mn. (c) 2006 American Institute of Physics.
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000240680300030
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被引频次:18[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240977
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Wei, SQ,Yan, WS,Sun, ZH,et al. Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy[J]. APPLIED PHYSICS LETTERS,2006,89(12):121901.
APA Wei, SQ.,Yan, WS.,Sun, ZH.,Liu, QH.,Zhong, WJ.,...&吴自玉.(2006).Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy.APPLIED PHYSICS LETTERS,89(12),121901.
MLA Wei, SQ,et al."Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy".APPLIED PHYSICS LETTERS 89.12(2006):121901.
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