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Electronic structures and metallization of HgS under high pressures: First principles calculations and resistivity measurements
Sun SR(孙少瑞); Li YC(李延春); Liu J(刘景); Dong YH(董宇辉); Sun, SR; Li, YC; Liu, J; Dong, YH; Gao, CX
2006
发表期刊PHYSICAL REVIEW B
卷号73期号:11页码:113201
通讯作者Chinese Acad Sci, Beijing Synchrotron Radiat Fac, Inst High Energy Phys, Beijing 100049, Peoples R China ; Jilin Univ, State Key Lab Super Hard Mat, Changchun 130012, Peoples R China
文章类型Article
摘要The electronic structures of HgS under high pressures are studied by the first principle calculations and the resistivity measurements under pressures. The widths of the band gaps decrease significantly with increasing pressures, which is consistent with the experimental results of the resistivities. HgS with cinnabar structure is a direct band gap semiconductor under pressure lower than 8 GPa. It becomes an indirect band gap semiconductor under the pressures above 8 GPa. When the pressures are higher than 20 GPa, it turns to a semimetal and becomes metallic after the phase transition to rocksalt structure under 26 GPa.
学科领域Physics
研究领域[WOS]Physics ; Physics
DOI10.1103/PhysRevB.73.113201
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Condensed Matter
WOS记录号WOS:000236467300014
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被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240931
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Sun SR,Li YC,Liu J,et al. Electronic structures and metallization of HgS under high pressures: First principles calculations and resistivity measurements[J]. PHYSICAL REVIEW B,2006,73(11):113201.
APA 孙少瑞.,李延春.,刘景.,董宇辉.,Sun, SR.,...&Gao, CX.(2006).Electronic structures and metallization of HgS under high pressures: First principles calculations and resistivity measurements.PHYSICAL REVIEW B,73(11),113201.
MLA 孙少瑞,et al."Electronic structures and metallization of HgS under high pressures: First principles calculations and resistivity measurements".PHYSICAL REVIEW B 73.11(2006):113201.
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