Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films
Liu, XF; Iqbal, J; Gong, WM; Yang, SL; Gao, RS; Zeng, F; Yu, RH; He, B; Hao, YP; Hao, XP; Hao XP(郝小鹏)
刊名JOURNAL OF APPLIED PHYSICS
2009
卷号105期号:9页码:93931
学科分类Physics
DOI10.1063/1.3125325
通讯作者[Liu, X. F. ; Iqbal, Javed ; Gong, W. M. ; Yang, S. L. ; Gao, R. S. ; Zeng, F. ; Yu, R. H.] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China ; [He, B.] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China ; [Hao, Y. P.] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China ; [Hao, X. P.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
文章类型Article
英文摘要Sn1-xCoxO2 films have been fabricated to study the local structure of Co dopant and the mediation effects of donor defects (oxygen vacancies and Sn interstitials) on magnetic properties. Compared to as-grown film, the ferromagnetism is evidently enhanced after annealing in vacuum at 400 C due to the increase in oxygen vacancies. While annealing at higher temperature, the ferromagnetism declines because of the domination of decrease in Sn interstitials over increase in oxygen vacancies in the films. The incorporation of Co dopant as well as the presence of oxygen vacancies and Sn interstitials is verified using x-ray absorption fine structure spectroscopy. The variations in the concentration of defects as a function of annealing temperature are obtained by positron annihilation spectroscopy technique. Additionally, the changes in structure and ferromagnetism after annealing in different atmospheres further demonstrate the crucial roles of oxygen vacancies and Sn interstitials in tuning ferromagnetism. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3125325]
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000266263300119
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240853
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Liu, XF,Iqbal, J,Gong, WM,et al. Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films[J]. JOURNAL OF APPLIED PHYSICS,2009,105(9):93931.
APA Liu, XF.,Iqbal, J.,Gong, WM.,Yang, SL.,Gao, RS.,...&郝小鹏.(2009).Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films.JOURNAL OF APPLIED PHYSICS,105(9),93931.
MLA Liu, XF,et al."Correlation between donor defects and ferromagnetism in insulating Sn1-xCoxO2 films".JOURNAL OF APPLIED PHYSICS 105.9(2009):93931.
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