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Defects around self-organized InAs quantum dots measured by slow positron beam
Meng, XQ; Chen, ZQ; Jin, P; Wang, ZG; Wei, L; Wei L(魏龙)
2007
发表期刊APPLIED PHYSICS LETTERS
卷号91期号:9页码:93510
通讯作者Wuhan Univ, Key Lab Acoust & Photon Mat, Devices Minist Educ, Wuhan 430072, Peoples R China ; Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Lab Nucl Analysis Technol, Beijing 100083, Peoples R China
摘要Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy. The authors try to use a slow positron beam to detect defects in and around self-organized QDs, and point defects are observed in GaAs cap layer above QDs. For the self-organized InAs QDs without strain-reducing layer, it is free of defects. However, by introducing a strain-reducing layer, the density of point defects around larger sized InAs QDs increased. The above results suggest that low energy positron beam measurements may be a good approach to detect depth profiles of defects in QD materials. (c) 2007 American Institute of Physics.
文章类型Article
学科领域Physics
DOI10.1063/1.2776861
研究领域[WOS]Physics
URL查看原文
语种英语
WOS类目Physics, Applied
WOS记录号WOS:000249156100135
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被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240852
专题核技术应用研究中心
作者单位中国科学院高能物理研究所
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Meng, XQ,Chen, ZQ,Jin, P,et al. Defects around self-organized InAs quantum dots measured by slow positron beam[J]. APPLIED PHYSICS LETTERS,2007,91(9):93510.
APA Meng, XQ,Chen, ZQ,Jin, P,Wang, ZG,Wei, L,&魏龙.(2007).Defects around self-organized InAs quantum dots measured by slow positron beam.APPLIED PHYSICS LETTERS,91(9),93510.
MLA Meng, XQ,et al."Defects around self-organized InAs quantum dots measured by slow positron beam".APPLIED PHYSICS LETTERS 91.9(2007):93510.
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