Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals
Liu, Y; Wang, G; Wang, SC; Yang, JH; Chen, LA; Qin, XB; Song, B; Wang, BY; Chen, XL; Qin XB(秦秀波); Wang BY(王宝义)
刊名PHYSICAL REVIEW LETTERS
2011
卷号106期号:8页码:87205
学科分类Physics
DOI10.1103/PhysRevLett.106.087205
通讯作者[Liu, Yu ; Wang, Gang ; Wang, Shunchong ; Chen, Xiaolong] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China ; [Yang, Jianhui ; Chen, Liang] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China ; [Qin, Xiubo ; Wang, Baoyi] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [Song, Bo] Harbin Inst Technol, Acad Fundamental & Interdisciplinary Sci, Harbin 150080, Peoples R China
文章类型Article
英文摘要Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (VSiVC) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000287714900014
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被引频次:96[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240835
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Liu, Y,Wang, G,Wang, SC,et al. Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals[J]. PHYSICAL REVIEW LETTERS,2011,106(8):87205.
APA Liu, Y.,Wang, G.,Wang, SC.,Yang, JH.,Chen, LA.,...&王宝义.(2011).Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals.PHYSICAL REVIEW LETTERS,106(8),87205.
MLA Liu, Y,et al."Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals".PHYSICAL REVIEW LETTERS 106.8(2011):87205.
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