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Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells
Zhang, JC; Jiang, DS; Sun, Q; Wang, JF; Wang, YT; Liu, JP; Chen, J; Jin, RQ; Zhu, JJ; Yang, H; Dai, T; Jia, QJ; Jia QJ(贾全杰)
2005
发表期刊APPLIED PHYSICS LETTERS
卷号87期号:7页码:71908
通讯作者Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
文章类型Article
摘要The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The omega scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN/GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low. (C) 2005 American Institute of Physics.
学科领域Physics
研究领域[WOS]Physics ; Physics
DOI10.1063/1.2012531
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语种英语
研究领域[WOS]Physics ; Physics
WOS类目Physics, Applied
WOS记录号WOS:000231246000021
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被引频次:45[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240750
专题多学科研究中心
作者单位中国科学院高能物理研究所
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Zhang, JC,Jiang, DS,Sun, Q,et al. Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells[J]. APPLIED PHYSICS LETTERS,2005,87(7):71908.
APA Zhang, JC.,Jiang, DS.,Sun, Q.,Wang, JF.,Wang, YT.,...&贾全杰.(2005).Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells.APPLIED PHYSICS LETTERS,87(7),71908.
MLA Zhang, JC,et al."Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells".APPLIED PHYSICS LETTERS 87.7(2005):71908.
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