Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells
Zhang, JC; Jiang, DS; Sun, Q; Wang, JF; Wang, YT; Liu, JP; Chen, J; Jin, RQ; Zhu, JJ; Yang, H; Dai, T; Jia, QJ; Jia QJ(贾全杰)
刊名APPLIED PHYSICS LETTERS
2005
卷号87期号:7页码:71908
学科分类Physics
DOI10.1063/1.2012531
通讯作者Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
文章类型Article
英文摘要The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The omega scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN/GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low. (C) 2005 American Institute of Physics.
类目[WOS]Physics, Applied
研究领域[WOS]Physics
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语种英语
WOS记录号WOS:000231246000021
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被引频次:43[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ihep.ac.cn/handle/311005/240750
专题中国科学院高能物理研究所_多学科研究中心_期刊论文
作者单位中国科学院高能物理研究所
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Zhang, JC,Jiang, DS,Sun, Q,et al. Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells[J]. APPLIED PHYSICS LETTERS,2005,87(7):71908.
APA Zhang, JC.,Jiang, DS.,Sun, Q.,Wang, JF.,Wang, YT.,...&贾全杰.(2005).Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells.APPLIED PHYSICS LETTERS,87(7),71908.
MLA Zhang, JC,et al."Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells".APPLIED PHYSICS LETTERS 87.7(2005):71908.
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