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Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement
Han, YH; Gao, CX; Ma, YZ; Liu, HW; Pan, YW; Luo, JF; Li, M; He, CY; Huang, XW; Zou, GT; Li YC(李延春); Li XD(李晓东); Liu J(刘景)
2005
Source PublicationAPPLIED PHYSICS LETTERS
Volume86Issue:6Pages:64104
Corresponding AuthorJilin Univ, Natl Lab Superhard Mat, Inst Atom & Mol Phys, Changchun 130012, Peoples R China ; Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA ; Chinese Acad Sci, Beijing Synchrotron Radiat Lab, Inst High Energy Phys, Beijing 100039, Peoples R China
SubtypeArticle
AbstractA multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9-17.9 GPa to be a semiconductor to semiconductor transformation. (C) 2005 American Institute of Physics.
Subject AreaPhysics
DOI10.1063/1.1863444
URL查看原文
Indexed ByADS
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000227355200090
ADS Bibcode2005ApPhL..86f4104H
ADS URLhttps://ui.adsabs.harvard.edu/abs/2005ApPhL..86f4104H
ADS CITATIONShttps://ui.adsabs.harvard.edu/abs/2005ApPhL..86f4104H/citations
Citation statistics
Cited Times:56 [ADS]
Document Type期刊论文
Identifierhttp://ir.ihep.ac.cn/handle/311005/240730
Collection多学科研究中心
中国科学院高能物理研究所_科研计划处
Affiliation中国科学院高能物理研究所
First Author AffilicationInstitute of High Energy
Recommended Citation
GB/T 7714
Han, YH,Gao, CX,Ma, YZ,et al. Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement[J]. APPLIED PHYSICS LETTERS,2005,86(6):64104.
APA Han, YH.,Gao, CX.,Ma, YZ.,Liu, HW.,Pan, YW.,...&刘景.(2005).Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement.APPLIED PHYSICS LETTERS,86(6),64104.
MLA Han, YH,et al."Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement".APPLIED PHYSICS LETTERS 86.6(2005):64104.
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